Theory of Adsorption on Metal Substrates

Contents: 5.1 Introduction 5.2 Concepts and definitions 5.3 The tight-binding picture of bonding 5.4 Adsorption of isolated adatoms 5.5 Alkali-metal adsorption: the traditional picture of on-surface adsorption 5.6 Substitutional adsorption and formation of surface alloys 5.7 Adsorption of CO on transition-metal surfaces - a model system for a simple molecular adsorbate 5.8 Co-adsorption [the example CO plus O on Ru(0001)] 5.9 Chemical reactions at metal surfaces 5.10 The catalytic oxidation of CO 5.11 Summary outline of main pointsComment: 73 pages including 44 figures. A version with high-resolution figures and related publications can be found at http://www.fhi-berlin.mpg.de/th/paper.htm

Mechanism of efficient carbon monoxide oxidation at Ru(0001)

We performed density-functional theory calculations using the generalized gradient approximation for the exhange-correlation functional to investigate the unusual catalytic behavior of Ru under elevated gas pressure conditions for the carbon monoxide oxidation reaction, which includes a particularly high CO_2 turnover. Our calculations indicate that a full monolayer of adsorbed oxygen actuates the high rate, enabling CO_2 formation via both scattering of gas-phase CO molecules as well as by CO molecules adsorbed at oxygen vacancies in the adlayer, where the latter mechanism is expected to be very efficient due to the relatively weak adsorption energy of both CO and O, as well as the close proximity of these reactants. In the present paper we analyse the bonding and electronic properties associated with the reaction pathway for CO_2 production via the scattering reaction. We find that the identified ``bent'' transition state is due to electron transfer into the unoccupied 2 pi orbitals of the CO molecule which reduces the Pauli repulsion between the impinging CO and the O-covered surface. Bond formation to CO_2 then proceeds by electron transfer back from the CO 2 pi orbitals into the bonding region between CO and the adsorbed O atom.Comment: 20 pages, 7 figures. J. Vac. Sci. and Techn., in press (submitted September 1996

Theory of alkali metal adsorption on close-packed metal surfaces

Results of recent density functional theory calculations for alkali metal adsorbates on close-packed metal surfaces are discussed. Single adatoms on the (111) surface of Al and Cu are studied with the self-consistent surface Green-function method by which the pure adsorbate-substrate interaction may be analyzed. Higher coverage ordered adlayers of K on Al(111), Na on Al(111), and Na on Al(001) are treated using the ab-initio pseudopotential plane wave method which affords the prediction of coverage dependent stable and metastable adsorbate geometries and phase transitions of the adsorbate layers. Together, these studies give insight and understanding into current key issues in alkali metal adsorption, namely, the nature of the adsorbate-substrate bond at low coverage and the occurrence of hitherto unanticipated adsorbate geometries, and the associated electronic properties.Comment: to be published in Surface Reviews and Letters, 18 pages, 18 figure

Coadsorption of CO and O on Ru(0001): A structural analysis by density functional theory

Knowledge of the atomic geometry of a surface is a prerequisite for any detailed understanding of the surface's electronic structure and chemical properties. Previous studies have convincingly demonstrated that density functional theory (DFT) yields accurate surface atomic geometries and that reliable predictions concerning stable and metastable phases can be made on the basis of the calculated energetics. In the present work we use DFT to investigate the atomic structure of four ordered coadsorbate phases of carbon monoxide and oxygen on Ru(0001). All of the structures have a (2x2) periodicity with differing concentrations of CO molecules and O atoms. For two of these phases dynamical low-energy electron diffraction (LEED) intensity analyses have been performed and the agreement between our DFT- and the LEED-determined structures is found to be very good. We predict the atomic geometry of the third phase for which no structural determination based on experiments has been made to date. We also predict the stability of a new ordered mixed phase.Comment: 6 pages, 1 figure, submitted to Israel Journal of Chemistry (June 29, 1998). Other related publications can be found at http://www.rz-berlin.mpg.de/th/paper.htm

Study of CO Oxidation over Ru(0001) at High Gas Pressures

Experiments performed at high gas partial pressures have demonstrated that the kinetics of the CO oxidation reaction at Ru(0001) is different and somewhat anomalous compared to that over other transition metal surfaces and, in particular, the turnover rate is exceptionally high. In order to gain insight into the underlying reasons for this behavior, we performed density functional theory calculations using the generalized gradient approximation for the exchange-correlation functional. We find that the high rate is due to a weakly, but nevertheless well bound, (1x1) oxygen adsorbate layer which may form for high O_2 pressures but not under usual ultra high vacuum conditions. The calculations indicate that reaction to CO_2 occurs both via scattering of gas-phase CO molecules as well as by CO molecules weakly adsorbed at vacancies in the oxygen adlayer, where the latter mechanism dominates the rate.Comment: 13 pages, 4 figures. Surface Science, in press (submitted July 1996

Diffusivity of Ga and Al adatoms on GaAs(001)

The diffusivity of Ga and Al adatoms on the (2x4) reconstructed GaAs(001) surface are evaluated using detailed ab initio total energy calculations of the potential energy surface together with transition state theory. A strong diffusion anisotropy is found, with the direction of fastest diffusion being parallel to the surface As-dimer orientation. In contrast to previous calculations we identify a short--bridge position between the two As atoms of a surface dimer as the adsorption site for Al and Ga adatoms.Comment: 4 pages, 1 figures, to appear in "The Physics of Semiconductors

Fully anharmonic nonperturbative theory of vibronically renormalized electronic band structures

We develop a first-principles approach for the treatment of vibronic interactions in solids that overcomes the main limitations of state-of-the-art electron-phonon coupling formalisms. In particular, anharmonic effects in the nuclear dynamics are accounted to all orders via ab initio molecular dynamics simulations. This non-perturbative, self-consistent approach evaluates the response of the wave functions along the computed anharmonic trajectory; thus it fully considers the coupling between nuclear and electronic degrees of freedom. We validate and demonstrate the merits of the concept by calculating temperature-dependent spectral functions and band gaps for silicon and the cubic perovskite SrTiO3, a strongly anharmonic material featuring soft modes. In the latter case, our approach reveals that anharmonicity and higher-order vibronic couplings can contribute substantially to the electronic-structure at finite-temperatures, noticeably affecting macroscopic properties, such as absorption coefficients as well as thermal and electrical conductivities

Medicines and vaccines for the world's poorest: Is there any prospect for public-private cooperation?

This paper reviews the current status of the global pharmaceutical industry and its research and development focus in the context of the health care needs of the developing world. It will consider the attempts to improve access to critical drugs and vaccines, and increase the research effort directed at key public health priorities in the developing world. In particular, it will consider prospects for public-private collaboration. The challenges and opportunities in such public-private partnerships will be discussed briefly along with a look at factors that may be key to success. Much of the focus is on HIV/AIDS where the debate on the optimal balance between intellectual property rights (IPR) and human rights to life and health has been very public and emotive

Study of Strain and Temperature Dependence of Metal Epitaxy

Metallic films are important in catalysis, magneto-optic storage media, and interconnects in microelectronics, and it is crucial to predict and control their morphologies. The evolution of a growing crystal is determined by the behavior of each individual atom, but technologically relevant structures have to be described on a time scale of the order of (at least) tenths of a second and on a length scale of nanometers. An adequate theory of growth should describe the atomistic level on very short time scales (femtoseconds), the formation of small islands (microseconds), as well as the evolution of mesoscopic and macroscopic structures (tenths of seconds). The development of efficient algorithms combined with the availability of cheaper and faster computers has turned density functional theory (DFT) into a reliable and feasible tool to study the microscopic aspects of growth phenomena (and many other complex processes in materials science, condensed matter physics, and chemistry). In this paper some DFT results for diffusion properties on metallic surfaces are presented. Particularly, we will discuss the current understanding of the influences of strain on the diffusion (energy barrier and prefactor) of a single adatom on a substrate. A DFT total energy calculation by its nature is primarily a static calculation. An accurate way to describe the spatial and temporal development of a growing crystal is given by kinetic Monte Carlo (KMC). We will describe the method and its combination with microscopic parameters obtained from ab initio calculations. It is shown that realistic ab initio kinetic Monte Carlo simulations are able to predict an evolving mesoscopic structure on the basis of microscopic details.Comment: 25 pages, 6 figures, In: ``Morphological Organisation during Epitaxial Growth and Removal'', Eds. Z. Zhang, M. Lagally. World Scientific, Singapore 1998. other related publications can be found at http://www.rz-berlin.mpg.de/th/paper.htm

Errors in Hellmann-Feynman Forces due to occupation number broadening, and how they can be corrected

In ab initio calculations of electronic structures, total energies, and forces, it is convenient and often even necessary to employ a broadening of the occupation numbers. If done carefully, this improves the accuracy of the calculated electron densities and total energies and stabilizes the convergence of the iterative approach towards self-consistency. However, such a boardening may lead to an error in the calculation of the forces. Accurate forces are needed for an efficient geometry optimization of polyatomic systems and for ab initio molecular dynamics (MD) calculations. The relevance of this error and possible ways to correct it will be discussed in this paper. The first approach is computationally very simple and in fact exact for small MD time steps. This is demonstrated for the example of the vibration of a carbon dimer and for the relaxation of the top layer of the (111)-surfaces of aluminium and platinum. The second, more general, scheme employs linear-response theory and is applied to the calculation of the surface relaxation of Al(111). We will show that the quadratic dependence of the forces on the broadening width enables an efficient extrapolation to the correct result. Finally the results of these correction methods will be compared to the forces obtained by using the smearing scheme, which has been proposed by Methfessel and Paxton.Comment: 6 pages, 5 figures, Scheduled tentatively for the issue of Phys. Rev. B 15 15 Dec 97 Other related publications can be found at http://www.rz-berlin.mpg.de/th/paper.htm