Quantum Computing: From Hardware to Society

This magazine is both an introduction into quantum computing and an exploration of its impact on our world. It follows on from our 2019 magazine on the quantum internet. Since 2019, much progress has been made in quantum technologies worldwide. In 2020, for instance, the first European quantum computer came online in Delft. Although this is meant for experiments only, it shows that quantum computing is becoming real. We aim to present you with a basic picture of quantum computing, and sketch applications for which it can be used. The contents are meant to be accessible, but some texts may be more suitable for readers with a basic understanding of quantum technology. Let that not be a reason to stop exploring: the magazine is meant to be browsed, so you can find the articles that help you learn about quantum computers. At TU Delft, we see it as our responsibility to investigate and inform you about the impact of the technologies we develop. Hence, we also explore the potential impact of quantum computing on the world: how the expected wave of applications may ripple through society. This exploration is partly guess-work. Quantum computing is a new technology and no doubt more applications will be discovered. Moreover, while as a university we are good at describing what quantum computing is, it will be future users who determine what meaning its applications will have. That is why we also asked the help of experts in and outside of academia when exploring the impact of quantum computing. This magazine is the result of the work by the Quantum Computing Vision Team. Vision teams are composed of TU Delft scientists and engineers from many disciplines, and with vision teams TU Delft participates in public discussions on technologies. We hope this magazine offers you insights of what quantum computing can bring, and invites you to become part of the discussion of how we can make quantum computing meaningful to you and to society.Ethics & Philosophy of TechnologyQN/Wimmer GroupDesign AestheticsQCD/Sebastiano LabQCD/Scappucci La

Coherent Spin-Spin Coupling Mediated by Virtual Microwave Photons

We report the coherent coupling of two electron spins at a distance via virtual microwave photons. Each spin is trapped in a silicon double quantum dot at either end of a superconducting resonator, achieving spin-photon couplings up to around gs/2p=40 MHz. As the two spins are brought into resonance with each other, but detuned from the photons, an avoided crossing larger than the spin linewidths is observed with an exchange splitting around 2J/2p=20 MHz. In addition, photon-number states are resolved from the shift 2?s/2p=-13 MHz that they induce on the spin frequency. These observations demonstrate that we reach the strong dispersive regime of circuit quantum electrodynamics with spins. Achieving spin-spin coupling without real photons is essential to long-range two-qubit gates between spin qubits and scalable networks of spin qubits on a chip. QCD/Vandersypen LabQuTechBUS/TNO STAFFQCD/Scappucci LabQN/Vandersypen La

Vanishing Zeeman energy in a two-dimensional hole gas

A clear signature of Zeeman split states crossing is observed in a Landau fan diagram of strained germanium two-dimensional hole gas. The underlying mechanisms are discussed based on a perturbative model yielding a closed formula for the critical magnetic fields. These fields depend strongly on the energy difference between the topmost and neighboring valence bands and are sensitive to the quantum well thickness, strain, and spin-orbit interaction. The latter is a necessary feature for the crossing to occur. This framework enables a straightforward quantification of the hole-state parameters from simple measurements, thus paving the way for its use in design and modeling of hole-based quantum devices.QCD/Scappucci LabQuTechBusiness Developmen

Three-Dimensional Atomic-Scale Tomography of Buried Semiconductor Heterointerfaces

Atom probes generate three-dimensional atomic-scale tomographies of material volumes corresponding to the size of modern-day solid-state devices. Here, the capabilities of atom probe tomography are evaluated to analyze buried interfaces in semiconductor heterostructures relevant for electronic and quantum devices. Employing brute-force search, the current dominant reconstruction protocol to generate tomographic three-dimensional images from Atom Probe data is advanced to its limits. Using Si/SiGe heterostructure for qubits as a model system, the authors show that it is possible to extract interface properties like roughness and width that agree with transmission electron microscopy observations on the sub-nanometer scale in an automated and highly reproducible manner. The demonstrated approach is a versatile method for atomic-scale characterization of buried interfaces in semiconductor heterostructures.QCD/Scappucci LabBUS/Quantum Delf

Single-hole pump in germanium

Single-charge pumps are the main candidates for quantum-based standards of the unit ampere because they can generate accurate and quantized electric currents. In order to approach the metrological requirements in terms of both accuracy and speed of operation, in the past decade there has been a focus on semiconductor-based devices. The use of a variety of semiconductor materials enables the universality of charge pump devices to be tested, a highly desirable demonstration for metrology, with GaAs and Si pumps at the forefront of these tests. Here, we show that pumping can be achieved in a yet unexplored semiconductor, i.e. germanium. We realise a single-hole pump with a tunable-barrier quantum dot electrostatically defined at a Ge/SiGe heterostructure interface. We observe quantized current plateaux by driving the system with a single sinusoidal drive up to a frequency of 100 MHz. The operation of the prototype was affected by accidental formation of multiple dots, probably due to disorder potential, and random charge fluctuations. We suggest straightforward refinements of the fabrication process to improve pump characteristics in future experiments 2021 The Author(s). Published by IOP Publishing Ltd.QCD/Veldhorst LabQuTechBUS/TNO STAFFQN/Veldhorst LabQCD/Scappucci La

On-chip microwave filters for high-impedance resonators with gate-defined quantum dots

Circuit quantum electrodynamics (QED) employs superconducting microwave resonators as quantum buses. In circuit QED with semiconductor quantum-dot-based qubits, increasing the resonator impedance is desirable as it enhances the coupling to the typically small charge dipole moment of these qubits. However, the gate electrodes necessary to form quantum dots in the vicinity of a resonator inadvertently lead to a parasitic port through which microwave photons can leak, thereby reducing the quality factor of the resonator. This is particularly the case for high-impedance resonators, as the ratio of their total capacitance over the parasitic port capacitance is smaller, leading to larger microwave leakage than for 50-ω resonators. Here, we introduce an implementation of on-chip filters to suppress the microwave leakage. The filters comprise a high-kinetic-inductance nanowire inductor and a thin-film capacitor. The filter has a small footprint and can be placed close to the resonator, confining microwaves to a small area of the chip. The inductance and capacitance of the filter elements can be varied over a wider range of values than their typical spiral inductor and interdigitated capacitor counterparts. We demonstrate that the total linewidth of a 6.4 GHz and approximately 3-kω resonator can be improved down to 540 kHz using these filters.QCD/Vandersypen LabQuTechBusiness DevelopmentQCD/Scappucci LabQN/Vandersypen La

Valley Splitting in Silicon from the Interference Pattern of Quantum Oscillations

We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined in silicon metal oxide semiconductor Hall-bar transistors. These silicon metal oxide semiconductor Hall bars are made by advanced semiconductor manufacturing on 300 mm silicon wafers and support a two-dimensional electron gas of high quality with a maximum mobility of 17.6×103 cm2/Vs and minimum percolation density of 3.45×1010 cm-2. Because of the low disorder, we observe beatings in the Shubnikov-de Haas oscillations that arise from the energy splitting of the two low-lying conduction band valleys. From the analysis of the oscillations beating patterns up to T=1.7 K, we estimate a maximum valley splitting of ?EVS=8.2 meV at a density of 6.8×1012 cm-2. Furthermore, the valley splitting increases with density at a rate consistent with theoretical predictions for a near-ideal semiconductor-oxide interface. QCD/Scappucci LabQuTec

A single-hole spin qubit

Qubits based on quantum dots have excellent prospects for scalable quantum technology due to their compatibility with standard semiconductor manufacturing. While early research focused on the simpler electron system, recent demonstrations using multi-hole quantum dots illustrated the favourable properties holes can offer for fast and scalable quantum control. Here, we establish a single-hole spin qubit in germanium and demonstrate the integration of single-shot readout and quantum control. We deplete a planar germanium double quantum dot to the last hole, confirmed by radio-frequency reflectrometry charge sensing. To demonstrate the integration of single-shot readout and qubit operation, we show Rabi driving on both qubits. We find remarkable electric control over the qubit resonance frequencies, providing great qubit addressability. Finally, we analyse the spin relaxation time, which we find to exceed one millisecond, setting the benchmark for hole quantum dot qubits. The ability to coherently manipulate a single hole spin underpins the quality of strained germanium and defines an excellent starting point for the construction of quantum hardware.QCD/Veldhorst LabBusiness DevelopmentQCD/Scappucci La

Rapid gate-based spin read-out in silicon using an on-chip resonator

Silicon spin qubits are one of the leading platforms for quantum computation1,2. As with any qubit implementation, a crucial requirement is the ability to measure individual quantum states rapidly and with high fidelity. Since the signal from a single electron spin is minute, the different spin states are converted to different charge states3,4. Charge detection, so far, has mostly relied on external electrometers5–7, which hinders scaling to two-dimensional spin qubit arrays2,8,9. Alternatively, gate-based dispersive read-out based on off-chip lumped element resonators has been demonstrated10–13, but integration times of 0.2–2 ms were required to achieve single-shot read-out14–16. Here, we connect an on-chip superconducting resonant circuit to two of the gates that confine electrons in a double quantum dot. Measurement of the power transmitted through a feedline coupled to the resonator probes the charge susceptibility, distinguishing whether or not an electron can oscillate between the dots in response to the probe power. With this approach, we achieve a signal-to-noise ratio of about six within an integration time of only 1 μs. Using Pauli’s exclusion principle for spin-to-charge conversion, we demonstrate single-shot read-out of a two-electron spin state with an average fidelity of >98% in 6 μs. This result may form the basis of frequency-multiplexed read-out in dense spin qubit systems without external electrometers, therefore simplifying the system architecture.Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.QCD/Vandersypen LabQN/Kuipers LabQN/AfdelingsbureauQCD/Scappucci LabQN/Vandersypen La

Fast universal quantum gate above the fault-tolerance threshold in silicon

Fault-tolerant quantum computers that can solve hard problems rely on quantum error correction1. One of the most promising error correction codes is the surface code2, which requires universal gate fidelities exceeding an error correction threshold of 99 per cent3. Among the many qubit platforms, only superconducting circuits4, trapped ions5 and nitrogen-vacancy centres in diamond6 have delivered this requirement. Electron spin qubits in silicon7–15 are particularly promising for a large-scale quantum computer owing to their nanofabrication capability, but the two-qubit gate fidelity has been limited to 98 per cent owing to the slow operation16. Here we demonstrate a two-qubit gate fidelity of 99.5 per cent, along with single-qubit gate fidelities of 99.8 per cent, in silicon spin qubits by fast electrical control using a micromagnet-induced gradient field and a tunable two-qubit coupling. We identify the qubit rotation speed and coupling strength where we robustly achieve high-fidelity gates. We realize Deutsch–Jozsa and Grover search algorithms with high success rates using our universal gate set. Our results demonstrate universal gate fidelity beyond the fault-tolerance threshold and may enable scalable silicon quantum computers.Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.BUS/TNO STAFFQCD/Scappucci La