Impact of positions of sensing area in ahannel of dielectric modulated MOSFET based biosensor

In this work, a gate underlap channel dielectric-modulated (DM) double-gate (DG) MOSFET which is working as biosensor for the label free electrical detection of the biomolecules has been investigated. The electrical characteristics such as, threshold voltage and drain current of DM DG MOSFET have been studied by the device simulation. The shift in the threshold voltage has been used as the sensing metric to detect the sensitivity after the biomolecules interacts with the device. four-gate NMOS inverter has also been used to investigate a label free electrical detection of the biomolecules. The work has been done under the consideration of dry environment condition

Model of GaSb-InAs p-i-n Gate All Around BioTunnel FET

This paper investigates the role of a hetero-junction p-i-n gate all around tunnel FET architecture for biosensing applications. The device offers a better sensitivity and has been modeled in terms of various parameters such as surface potential, threshold voltage, and drain current. Analytical modeling scheme relates to the exact resultant solution of the two-dimensional Poisson equation. The shift in the threshold voltage has been considered as the sensing parameter to detect the sensitivity when the biomolecules are immobilized in the cavity region