Beam test performance of a prototype module with Short Strip ASICs for the CMS HL-LHC tracker upgrade

International audienceThe Short Strip ASIC (SSA) is one of the four front-endchips designed for the upgrade of the CMS Outer Tracker for the HighLuminosity LHC. Together with the Macro-Pixel ASIC (MPA) it willinstrument modules containing a strip and a macro-pixel sensorstacked on top of each other. The SSA provides both full readout ofthe strip hit information when triggered, and, together with theMPA, correlated clusters called stubs from the two sensors for useby the CMS Level-1 (L1) trigger system. Results from the firstprototype module consisting of a sensor and two SSA chips arepresented. The prototype module has been characterized at theFermilab Test Beam Facility using a 120 GeV proton beam

Evaluation of HPK n+n^+-pp planar pixel sensors for the CMS Phase-2 upgrade

To cope with the challenging environment of the planned high luminosity upgrade of the Large Hadron Collider (HL-LHC), scheduled to start operation in 2029, CMS will replace its entire tracking system. The requirements for the tracker are largely determined by the long operation time of 10~years with an instantaneous peak luminosity of up to $7.5\times 10^{34}$~cm$^{-2}$s$^{-1}$ in the ultimate performance scenario. Depending on the radial distance from the interaction point, the silicon sensors will receive a particle fluence corresponding to a non-ionizing energy loss of up to $\Phi_{\text{eq}} = 3.5\times 10^{16}$~cm$^{-2}$. This paper focuses on planar pixel sensor design and qualification up to a fluence of $\Phi_{\text{eq}} = 1.4\times 10^{16}$~cm$^{-2}$. For the development of appropriate planar pixel sensors an R\&D program was initiated, which includes $n^+$-$p$ sensors on 150 mm (6'') wafers with an active thickness of 150~$\mu$m with pixel sizes of $100\times 25$~$\mu$m$^2$ and $50\times 50$~$\mu$m$^2$ manufactured by Hamamatsu Photonics K.K.\ (HPK). Single chip modules with ROC4Sens and RD53A readout chips were made. Irradiation with protons and neutrons, as well was an extensive test beam campaign at DESY were carried out. This paper presents the investigation of various assemblies mainly with ROC4Sens readout chips. It demonstrates that multiple designs fulfill the requirements in terms of breakdown voltage, leakage current and efficiency. The single point resolution for $50\times 50$~$\mu$m$^2$ pixels is measured as 4.0~$\mu$m for non-irradiated samples, and 6.3~$\mu$m after irradiation to $\Phi_{\text{eq}} = 7.2\times 10^{15}$~cm$^{-2}$.To cope with the challenging environment of the planned high luminosity upgrade of the Large Hadron Collider (HL-LHC), sched- uled to start operation in 2029, CMS will replace its entire tracking system. The requirements for the tracker are largely determined by the long operation time of 10 years with an instantaneous peak luminosity of up to 7.5 × 1034 cm−2 s−1 in the ultimate perfor- mance scenario. Depending on the radial distance from the interaction point, the silicon sensors will receive a particle fluence corresponding to a non-ionizing energy loss of up to Φeq = 3.5 × 1016 cm−2. This paper focuses on planar pixel sensor design and qualification up to a fluence of Φeq = 1.4 × 1016 cm−2. For the development of appropriate planar pixel sensors an R&D program was initiated, which includes n+-p sensors on 150 mm (6”) wafers with an active thickness of 150 μm with pixel sizes of 100 × 25 μm2 and 50 × 50 μm2 manufactured by Hamamatsu. Single chip modules with ROC4Sens and RD53A readout chips were made. Irradiation with protons and neutrons, as well was an extensive test beam campaign at DESY were carried out. This paper presents the investigation of various assemblies mainly with ROC4Sens readout chips. It demonstrates that multiple designs fulfill the requirements in terms of breakdown voltage, leakage current and efficiency. The single point resolution for 50 × 50 μm2 pixels is measured as 4.0 μm for non-irradiated samples, and 6.3 μm after irradiation to Φeq = 7.2 × 1015 cm−2.To cope with the challenging environment of the planned high luminosity upgrade of the Large Hadron Collider (HL-LHC), scheduled to start operation in 2029, CMS will replace its entire tracking system. The requirements for the tracker are largely determined by the long operation time of 10 years with an instantaneous peak luminosity of up to 7.5 × 1034cm−2s−1 in the ultimate performance scenario. Depending on the radial distance from the interaction point, the silicon sensors will receive a particle fluence corresponding to a non-ionising energy loss of up to Φeq= 3.5 × 1016cm−2. This paper focuses on planar pixel sensor design and qualification up to a fluence of Φeq = 1.4 × 1016cm−2. For the development of appropriate planar pixel sensors an R&D program was initiated, which includes n+-p sensors on 150mm (6”) wafers with an active thickness of 150µm with pixel sizes of 100×25 µm2 and 50×50 µm2 manufactured by Hamamatsu Photonics K.K. (HPK). Single chip modules with ROC4Sens and RD53A readout chips were made. Irradiation with protons and neutrons, as well was an extensive test beam campaign at DESY were carried out. This paper presents the investigation of various assemblies mainly with ROC4Sens readout chips. It demonstrates that multiple designs fulfil the requirements in terms of breakdown voltage, leakage current and efficiency. The single point resolution for 50×50 µm2 pixels is measured as 4.0µm for non-irradiated samples, and 6.3µm after irradiation to Φeq = 7.2 × 1015cm−2

Evaluation of HPK n+n^+-pp planar pixel sensors for the CMS Phase-2 upgrade

International audienceTo cope with the challenging environment of the planned high luminosity upgrade of the Large Hadron Collider (HL-LHC), sched-uled to start operation in 2029, CMS will replace its entire tracking system. The requirements for the tracker are largely determinedby the long operation time of 10 years with an instantaneous peak luminosity of up to 7.5 × 1034 cm−2 s−1 in the ultimate perfor-mance scenario. Depending on the radial distance from the interaction point, the silicon sensors will receive a particle fluencecorresponding to a non-ionizing energy loss of up to Φeq = 3.5 × 1016 cm−2. This paper focuses on planar pixel sensor design andqualification up to a fluence of Φeq = 1.4 × 1016 cm−2.For the development of appropriate planar pixel sensors an R&D program was initiated, which includes n+-p sensors on 150 mm(6”) wafers with an active thickness of 150 μm with pixel sizes of 100 × 25 μm2 and 50 × 50 μm2 manufactured by Hamamatsu.Single chip modules with ROC4Sens and RD53A readout chips were made. Irradiation with protons and neutrons, as well was anextensive test beam campaign at DESY were carried out. This paper presents the investigation of various assemblies mainly withROC4Sens readout chips. It demonstrates that multiple designs fulfill the requirements in terms of breakdown voltage, leakagecurrent and efficiency. The single point resolution for 50 × 50 μm2 pixels is measured as 4.0 μm for non-irradiated samples, and6.3 μm after irradiation to Φeq = 7.2 × 1015 cm−2