Gate-capacitance extraction from RF C-V measurements

In this work, a full two-port analysis of an RF C-V measurement set-up is given. This two-port analysis gives insight on the limitations of the commonly used gate capacitance extraction, based on the Y/sub 11/ parameter of the device. It is shown that the parasitics of the device can disturb the extracted gate capacitance and a new extraction scheme, based on the Z-matrix, is introduced that eliminates the effect of these parasitics. Measurement results prove the validity of this new extraction scheme, under different conditions

Interface trap response to RF charge pumping measurements

In this paper we will discuss the interface trap response to CP measurements at RF gate excitation. An explanation is given on how to accurately perform RF CP measurements, using an improved technique. Based on the observed response of the pumped charge per cycle with increasing frequencies a model is developed that is able to explain the observed roll-off. It is an extension to the well known classical model and it takes into account both the limited capture rates as well as a distribution of traps in the oxide

Record RF performance of standard 90 nm CMOS technology

We have optimized 3 key RF devices realized in standard logic 90 nm CMOS technology and report a record performance in terms of n-MOS maximum oscillation frequency f/sub max/ (280 GHz), varactor tuning range and varactor and inductor quality factor

Reliability engineering in RF CMOS

In this thesis new developments are presented for reliability engineering in RF CMOS. Given the increase in use of CMOS technology in applications for mobile communication, also the reliability of CMOS for such applications becomes increasingly important. When applied in these applications, CMOS is typically referred to as RF CMOS, where RF stands for radio frequencies

Charge Pumping at radio Frequencies: Methodology, Trap Response and Application

The charge pumping (CP) technique is known for its high accuracy of determining the interface state density on MOS devices [1]. With reducing oxide thickness, the tunneling current can dramatically disturb the accuracy of the obtained CP results [2]. In this paper we discuss the applicability of the RF CP technique for extracting the interface state density on these dielectrics. We present an improved measurement approach, new data, and an improved model for the description of the RF CP response of fast interface states

Charge pumping at radio frequencies [MOSFET device interface state density measurement]

In this work, for the first time, charge pump results are shown that are obtained at frequencies in the GHz range. A comparison is made with charge pump results at lower frequencies. A very good agreement is seen between the low frequency charge pump data and the RF charge pump data. Measurement results on dielectrics that suffer from a high leakage current show that a charge pump current can be measured at frequencies above 500 MHz. At lower frequencies the charge pump current is completely overwhelmed by the leakage current and therefore normal charge pump currents are not usable for measuring the interface state density. This indicates that the RF charge pump technique is very promising for measuring the interface state density on ultra thin dielectrics

Methodology for performing RF reliability experiments on a generic test structure

This paper discusses a new technique developed for generating well defined RF large voltage swing signals for on wafer experiments. This technique can be employed for performing a broad range of different RF reliability experiments on one generic test structure. The frequency dependence of a gate-oxide wear out stress was investigated using this methodology for frequencies of up to 1 GHz

The RF charge pump technique for measuring the interface state density on leaky dielectrics

In this work the RF charge pump technique is presented. It is shown that this technique can rovide charge pump data of devices that have a leakage current too high for classical charge pump measurements. The methodology of accurately performing RF charge pump measurements is discussed and measurement results on devices with both a very high leakage current and moderate leakage current are shown. Charge pump data obtained at frequencies of up to 2 GHz are shown. It is verified that the RF charge pump data can indeed be used for extracting the interface state density and it is also investigated how this extraction can be performed accurately