Protein subcellular relocalization increases the retention of eukaryotic duplicate genes

Gene duplication is widely accepted as a key evolutionary process, leading to new genes and novel protein functions. By providing the raw genetic material necessary for functional expansion, the mechanisms that involve the retention and functional diversification of duplicate genes are one of the central topics in evolutionary and comparative genomics. One proposed source of retention and functional diversification is protein subcellular relocalization (PSR). PSR postulates that changes in the subcellular location of eukaryotic duplicate proteins can positively modify function and therefore be beneficial to the organism. As such, PSR would promote retention of those relocalized duplicates and result in significantly lower death rates compared with death rates of nonrelocalized duplicate pairs. We surveyed both relocalized and nonrelocalized duplicate proteins from the available genomes and proteomes of 59 eukaryotic species and compared their relative death rates over a Ks range between 0 and 1. Using the Cox proportional hazard model, we observed that the death rates of relocalized duplicate pairs were significantly lower than the death rates of the duplicates without relocalization in most eukaryotic species examined in this study. These observations suggest that PSR significantly increases retention of duplicate genes and that it plays an important, but currently underappreciated, role in the evolution of eukaryotic genomes

Protein Subcellular Relocalization Increases the Retention of Eukaryotic Duplicate Genes

Abstract Gene duplication is widely accepted as a key evolutionary process, leading to new genes and novel protein functions. By providing the raw genetic material necessary for functional expansion, the mechanisms that involve the retention and functional diversification of duplicate genes are one of the central topics in evolutionary and comparative genomics. One proposed source of retention and functional diversification is protein subcellular relocalization (PSR). PSR postulates that changes in the subcellular location of eukaryotic duplicate proteins can positively modify function and therefore be beneficial to the organism. As such, PSR would promote retention of those relocalized duplicates and result in significantly lower death rates compared with death rates of nonrelocalized duplicate pairs. We surveyed both relocalized and nonrelocalized duplicate proteins from the available genomes and proteomes of 59 eukaryotic species and compared their relative death rates over a Ks range between 0 and 1. Using the Cox proportional hazard model, we observed that the death rates of relocalized duplicate pairs were significantly lower than the death rates of the duplicates without relocalization in most eukaryotic species examined in this study. These observations suggest that PSR significantly increases retention of duplicate genes and that it plays an important, but currently underappreciated, role in the evolution of eukaryotic genomes

Influence of rice varieties and fertility levels on performance of rice and soil nutrient status under aerobic conditions

Scarcity of water resources in India is limiting the production of flooded rice crop. A field experiment was conducted in factorial RBD with sixteen treatment combinations including four rice varieties viz. V1: PR-115, V2: DRRH-3, V3: PAC-837 and V3: PR-121 and four fertility levels viz. F1: control (N0P0K0), F2: N, P2O5, K2O at 90: 45: 22.5 kg ha-1, F3: N, P2O5, K2O at 120:60:30 kg ha-1 and F4: N, P2O5, K2O at 150: 75: 37.5 kg ha-1 replicated thrice. The results revealed that among the different varieties, PAC-837 recorded highest plant height and number of tillers m-2 at all the growth stages. All yield attributes viz. number of effective tillers m-2, number of seeds per panicle, 1000-grain weight, spikelet sterility and grain yield, straw yield and harvest index significantly differed in different varieties and were recorded highest in PAC-837 which were however, statistically at par with DRRH-3 except grain yield and effective tillers m-2. Rice variety PAC-837 recorded highest grain yield of 45.65 q ha-1 and straw yield of 59.98 q ha-1. Among the fertility levels, number of effective tillers m-2 significantly increased up to 120: 60: 30 N-P2O5-K2O kg ha-1 thereafter nonsignificant differences were noticed. The grain and straw yield increased up to 150: 75: 37.5 N-P2O5-K2O kg ha-1 and recoded grain yield of 52.78 q ha-1 and straw yield of 73.85 q ha-1 with application of 150:75:37.5 N-P2O5-K2O kg ha-1. Nutrient application of 150: 75: 37.5 N-P2O5-K2O kg ha-1 recorded highest available N (238.16 kg ha-1), P (16.18 kg ha-1) and K (163.25 kg ha-1) in soil after harvest of the crop. Higher available nitrogen (235.28 kg ha-1), phosphorus (16.38 kg ha-1) and potassium (154.24 kg ha-1) n soil were recorded with PR-121 and lowest available major nutrients were recorded with variety PAC-837. This study would help to introduction and adaptation of new rice variety PAC-837 with application of 150: 75: 37.5 N-P2O5-K2O kg ha-1 under aerobic conditions in Shiwalik foothills region of North-Western Himalayas

Implementation of gate-all-around gate-engineered charge plasma nanowire FET-based common source amplifier

This paper examines the performance of a Gate-Engineered Gate-All-Around Charge Plasma Nanowire Field Effect Transistor (GAA-DMG-GS-CP NW-FET) and the implementation of a common source (CS) amplifier circuit. The proposed GAA-DMG-GS-CP NW-FET incorporates dual-material gate (DMG) and gate stack (GS) as gate engineering techniques and its analog/RF performance parameters are compared to those of the Gate-All-Around Single-Material Gate Charge Plasma Nanowire Field Effect Transistor (GAA-SMG-CP NW-FET) device. Both Gate-All-Around (GAA) devices are designed using the Silvaco TCAD tool. GAA structures have demonstrated good gate control because the gate holds the channel, which is an inherent advantage for both devices discussed herein. The charge plasma dopingless technique is used, in which the source and drain regions are formed using metal contacts and necessary work functions rather than doping. This dopingless technique eliminates the need for doping, reducing fluctuations caused by random dopants and lowering the device’s thermal budget. Gate engineering techniques such as DMG and GS significantly improved the current characteristics which played a crucial role in obtaining maximum gain for circuit designs. The lookup table (LUT) approach is used in the implementation of the CS amplifier circuit with the proposed device. The transient response of the circuit is analyzed with both the device structures where the gain achieved for the CS amplifier circuit using the proposed GAA-DMG-GS-CP NW-FET is 15.06 dB. The superior performance showcased by the proposed GAA-DMG-GS-CP NW-FET device with analog, RF and circuit analysis proves its strong candidature for future nanoscale and low-power applications

An Adaptive User Profile for Filtering News Based on a User Interest Hierarchy

A prototype system for the filtering and ranking of news items has been developed and a pilot test has been conducted. The user’s interests are modeled by a user interest hierarchy based on explicit user feedback with adaptive learning after each session. The system learned very quickly, reaching normalized recall values of over 0.9 within three sessions. When the user’s interests “drifted”, the system adapted but the speed with which it adapted seemed dependent on the amount of feedback provided by the user

Lead zirconium titanate (PZT)-based gate-all-around negative-capacitance junctionless nanowire FET for distortionless low-power applications

A negative-capacitance (NC)-induced junctionless gate-all-around (GAA) nanowire field-effect transistor (FET) is proposed by deploying the ferroelectric material (FE) lead zirconium titanate (PZT) between the gate electrode and metal, referred to as the NC JLNWFET. The FE material is used as a gate dielectric in addition to a high-K dielectric. The PZT gate stacking develops a negative capacitance owing to the alignment of dipoles with biasing, which is responsible for improving the direct-current (DC) and linearity performance compared with the conventional JLNWFET. The parameters ION, IOFF, ION/IOFF, and Vth are considered for the DC analysis, whereas gm, gm2, gm3, and VIP2 are considered for the linearity analysis. The results show that ION and the ION/IOFF ratio are improved in the NC JLNWFET by a factor of 12.5 and 6.38. The impact of design parameters such as the channel doping, drain voltage, and interface trap charge on the electrical performance and linearity parameters is analyzed in detail. The improvement in the linearity results in a distortionless structure. The high ION/IOFF ratio and low Vth of the proposed structure mitigate the static and dynamic power in digital circuits and make the device suitable for use in low-power applications. Thus, the proposed NC JLNWFET can be used in distortionless and low-power applications

Design and analysis of electrostatic-charge plasma based dopingless IGZO vertical nanowire FET for ammonia gas sensing

In this paper, Dopingless Gate All Around (GAA) Vertical Nanowire Field Effect Transistor (VNWFET) is designed with artificial material Indium Gallium Zinc Oxide (IGZO) as a channel material. IGZO channel has high electron mobility compared to more traditional amorphous semiconductors. In VNWFETs, since the channel length (Lch) is characterized vertically, it can be relaxed without area penalty on-chip, which in turn also allows some relaxation in the nanowire diameter while keeping optimum short-channel-effects control. Electrostatic-Charge Plasma technique is used to form a source-drain region on an intrinsic body of IGZO material. At the source side, the N+ region is formed by selecting the appropriate work function of the metal electrode, and at the drain side, the N+ region is formed by giving biasing to the metal electrode. N+ channel dopingless VNWFET with the catalytic metal gate is proposed for ammonia gas sensing. Cobalt, Molybdenum, and Ruthenium are used as a gate electrode in ammonia gas detection due to their high reactivity towards ammonia. Also, we have compared their ON and OFF sensitivity of the proposed device toward the gas adsorption. Due to the presence of gas on the gate, the metal work function of gate metal changes which varies the OFF-current (IOFF), ON-current (ION) and Threshold voltage (Vth) as these are considered as sensitivity parameters for sensing the ammonia gas molecules. The dimensional parameters (radius, and length) and dielectric materials are varied to check the change in device sensitivities. Results show that as the work function varies increases 50, 100, 150, 200 meV and 250 meV for catalytic metal at the gate, the sensitivity is increased

Design and analysis of gate overlapped/underlapped NWFET based lable free biosensor

In this paper, gate all around (GAA) nanowire P-channel FET label free biosensor is proposed with cavity. Proposed structure is label free so it doesn’t require selective material for specific biomolecule enzymes. High surface to volume ratio provide good sensitivity which is crucial for any biosensor application. To sense the kind of biomolecule, there is a cavity created at the gate, so biological elements like enzymes interact with cavity and it changes the carrier concentration which in turn changes the current. In addition to this, first biosensor structure is analyzed with cavity at the source side and second structure is analyzed with cavity at the drain side. Length of cavity is varied from 10 nm to 40 nm for optimization of the proposed biosensor structure. This biosensor is used to find the amount of biomolecule present in aqueous solution through their enzymes. To estimate the sensing capability of this sensor, testing is done using glucose molecules. We observed comparatively better sensitivity when cavity is placed at drain side

Design and optimization of junctionless-based devices with noise reduction for ultra-high frequency applications

This paper offers the study of the noise performance of four devices namely junctionless dual-gate FET (JL-DGFET), junctionless nanowire FET (JL-NWFET), charge-plasma based dopingless dual-gate FET (DL-DGFET) and dopingless nanowire FET (DL-NWFET). This work examines the maximum Noise-Figure (NFmax.), Auto-correlation factor (< V1·V1* >)/(< V2·V2* >), cross-correlation factor (< V1·V2* >), and output impedance (real Zo). To understand the performance of devices, analog characteristics of all four devices and effect on these characteristics with the variations of different device structure parameters are analyzed and compared. Internal physics of device is understood by device design parameters such as electric field, channel potential, carrier mobility and carrier concentration. It is observed from the simulated results that JL-DGFET has better noise performance, highest ION/IOFF current ratio than other devices