Technology of fabrication of CDSXTe1-X solid solution on silicon substrate

Heterojunction between Si and CdSxTe1-x have been obtained by vacuum deposition of powders of cadmium sulfide and cadmium telluride on the surface of monocrystalline silicon. The optimal temperature regime for the growth of the CdSxTe1-x solid solution on the silicon surface has been determined. The values of the crystal lattice constant and the thickness of the CdSxTe1-x solid solution at the interface of the n/Si − n/ CdSxTe1-x heterostructure are calculated

Obtaining new types of compounds between silicon and cadmium sulfide

The n+CdS-nCdS-nSi+ structures were obtained, and their volt-ampere characteristics at different temperatures were studied. The dependence of the volt-ampere characteristic shows that the sublinear and quadratic section of these structures has a section of current growth with voltage. It is determined that the n+CdS-nCdS-nSi+ structures in the current flow direction at low illumination levels work as an injection photodiode. And these structures under laser illumination with λ=0.625 μm and power P=1.2 µW/cm2 have spectral sensitivity 2042 A/W, bias voltage 10 V. At irradiation by white light with energy W=3.6-10µW·s it has integral sensitivity ≈21 A/I'm (2310 A/W) at bias voltage U=10V

Obtaining new types of compounds between silicon and cadmium sulfide

The n+CdS-nCdS-nSi+ structures were obtained and their volt-ampere characteristics at different temperatures were studied. From the dependence of the volt-ampere characteristic it is shown that the sublinear and quadratic section of these structures has a section of current growth with voltage. It is determined that the n+CdS-nCdS-nSi+structures in the current flow direction at low illumination levels work as an injection photodiode. And these structures under laser illumination with λ=0.625 μm and power P=1.2 μW/cm2 have spectral sensitivity 2042 A/W, bias voltage 10 V. At irradiation by white light with energy W=3.6-10μW∙s it has integral sensitivity ≈21 A/I’m (2310 A/W) at bias voltage U=10V

Synthesis and characterization by experimental and theory research suitable on the CdS and CdO materials

In this paper, we have compared and analyzed experimental and theoretical research on A2B6 types semiconductor materials CdS and CdO. The XRD spectra of the samples were examined using an atomic force microscope and X-ray diffraction microscopy. During film deposition, the temperature of the crucible with a source (CdS) varied in the range Tsourse ≈ 800 ÷ 850°C, and the substrate temperature was maintained within the range Tp ≈ 250 ÷ 270°C. In this case, to ensure the reproducibility of the structures, a shutter was used, with the help of which the CdS deposition time was set, which ensured that the film thickness was the same from experiment to experiment

Technology of fabrication of CdSxTe1-x solid solution on silicon substrate

Heterojunction between Si and CdSxTe1-x have been obtained by the method of vacuum deposition of powders of cadmium sulfide and cadmium telluride on the surface of monocrystalline silicon. The optimal temperature regime for the growth of the CdSxTe1-x solid solution on the silicon surface has been determined. The values of the crystal lattice constant and the thickness of the CdSxTe1-x solid solution at the interface of the n/Si – n/CdSxTe1-x heterostructure are calculated

Influence of the parameters to transition capacitance at nCdS-pSi heterostructure

It is important to research the dependence of the capacitance and capacitance on the parameters on the photodiodes. In this article, we aim research experimental and theoretical on the nCdSpSi heterostructure. A heavily doped n+CdS layer with a thickness of about 50 Å was created by deposition of a thin layer of indium (In) for 25-30 s on the surface of a CdS film in vacuum with a residual pressure of 10-5 Torr at a substrate temperature of 373 K, followed by annealing at 673 K in within 300s. Then, on the surface of this heavily doped n+CdS layer, a current-collecting “P”-shaped ohmic contact with an area of 3 mm2 was obtained also by the vacuum evaporation of In

Viticulture and wine production: Challenges, opportunities and possible implications

Many agricultural sectors evaluate what advancements can be incorporated into their businesses to offer management support as technology keeps developing and advancing. This is especially essential to the wine business, as climate change and fluctuating atmospheric conditions, compacted seasons, drought, heat, labour shortages, and increasing production costs are all posing challenges to farmers in various parts of the world. This article aims to highlight different applications of viticulture based on digital techniques. The research will evaluate how these techniques offer opportunities for winemakers in response to increased environmental problems. The application of various proximal and remote sensing technologies has enhanced the knowledge of vineyard variation regarding geographical disparities and sequential dynamics and the underlying reasons for such variation. The study shows how knowing this information allows winemakers to use ideas more effectively through specific applications and harvest fruit packages strategically based on yield and/or fruit quality requirements and product requirements. Reduced input costs, higher efficiencies, and a better end product are all economic benefits of each of these outcomes. Since smart sensing techniques have an immense opportunity for producers at all stages, their implementation and regular use will be centered on accessible operating system and devices and the cost of integrating decision-support systems on a field scale. Data rights and security, especially when data is obtained through third parties, is a problem that must be addressed in the coming years to enable the widespread adoption of such technology

Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

It is important to research the dependence of the capacitance and capacitance on the parameters on the photodiodes. In this article, we aim research experimental and theoretical on the nCdSpSi heterostructure. A heavily doped n+CdS layer with a thickness of about 50 Å was created by deposition of a thin layer of indium (In) for 25-30 s on the surface of a CdS film in vacuum with a residual pressure of 10-5Torr at a substrate temperature of 373 K, followed by annealing at 673 K in within 300s. Then, on the surface of this heavily doped n+CdS layer, a current-collecting “P”-shaped ohmic contact with an area of 3 mm2 was obtained also by the vacuum evaporation of In

Synthesis and characterization by experimental and theory research suitable on the CdS and CdO materials

In this paper, we have compared and analyzed experimental and theoretical research on A2B6 types semiconductor materials CdS and CdO. The XRD spectra of the samples were examined using an atomic force microscope and X-ray diffraction microscopy. During film deposition, the temperature of the crucible with a source (CdS) varied in the range Tsourse ≈ 800 ÷ 850°C, and the substrate temperature was maintained within the range Tp ≈ 250 ÷ 270°C. In this case, to ensure the reproducibility of the structures, a shutter was used, with the help of which the CdS deposition time was set, which ensured that the film thickness was the same from experiment to experiment

Technology of fabrication of CdS

Heterojunction between Si and CdSxTe1-x have been obtained by the method of vacuum deposition of powders of cadmium sulfide and cadmium telluride on the surface of monocrystalline silicon. The optimal temperature regime for the growth of the CdSxTe1-x solid solution on the silicon surface has been determined. The values of the crystal lattice constant and the thickness of the CdSxTe1-x solid solution at the interface of the n/Si – n/CdSxTe1-x heterostructure are calculated