KINEMATIC ANALYSIS OF DIVING BACK PIKE SOMERSAULT IN PLATFORM ACCORDING TO PLAYERS’ SKILL LEVEL

The purpose of this study was to investigate the kinematic difference in Back Pike somersault in platform diving according to players‘ skill level and to assist them to improve performances. Ten Korean diving athletes participated in this study and they were divided into skilled group (n=5) and less-skilled group (n=5) and t-test was performed to find the difference at the moment of take-off between groups. The results showed that the hip extension angle was greater and the extension velocity of knee and hip joints were faster in skilled group compared to less-skilled group. It is recommended, therefore that the flexibility training of hip joint and muscle strength training to enhance extension velocity of knee and hip joints are needed

DIFFERENCES IN TRUNK ANGLES THROUGH DIFFERENT SHOOTING DIRECTIONS IN WATER POLO PENALTY SHOOTING

The purpose of this study was to investigate three-dimensionally the shooter’s trunk motion through 4 different shooting directions. Ten Korean national level water polo players who are right-handed were participated in this study (age, 21.60±3.20 years; weight, 86.30±8.86 kg; height, 1.83±0.05 m). To analyze the shooter’s trunk motion among different target, a three-dimensional motion analysis with six video cameras was performed.The analysis events were coking when the trunk was externally rotated maximally and release moment. A one-way ANOVA with repeated measure was performed as main statistical tests and Bonferroni correction was used as a post-hoc test. The results showed that there was statistically significant difference in trunk angle between left and right shooting directions. Especially, the posterior leaning and external rotation angles of trunk in cocking moment were bigger in left shooting direction compared to right one (p\u3c.05). These results suggest that goalkeepers predict shooting direction more precisely by identifying the trunk posture at coking moment

COORDINATIVE PATTERNS BETWEEN CARVING TURN AND SKIDDING TURN DURING ALPINE SKIING

The purpose of this study was to investigate the coordinative patterns between segments and ski using the continuous relative phase (CRP) on anteroposterior and vertical axis during carving and skidding turn. Fourteen alpine ski instructors were participated in this study. Eight inertial measurement units were used to collect segment kinematic data. Each skier was asked to perform ten carving turns and ten skidding turns on the groomed 15° slope, respectively. CRP angles between all segments and ski were significantly increased during carving turn on the vertical axis. On the other hand, CRP angles between all segments and ski were significantly increased during skidding turn on anteroposterior axis. Therefore, skiers should perform the anti-phase movements of the lower spine-ski, pelvis-ski, thigh-ski and shank-ski on the vertical axis during the carving turn and the in-phase movements of the lower spine-ski, pelvis-ski, thigh-ski and shank-ski on the anteroposterior axis during skidding turn

Investigation of the mechanism of the anomalous Hall effects in Cr2Te3/(BiSb)2(TeSe)3 heterostructure

The interplay between ferromagnetism and the non-trivial topology has unveiled intriguing phases in the transport of charges and spins. For example, it is consistently observed the so-called topological Hall effect (THE) featuring a hump structure in the curve of the Hall resistance (Rxy) vs. a magnetic field (H) of a heterostructure consisting of a ferromagnet (FM) and a topological insulator (TI). The origin of the hump structure is still controversial between the topological Hall effect model and the multi-component anomalous Hall effect (AHE) model. In this work, we have investigated a heterostructure consisting of BixSb2-xTeySe3-y (BSTS) and Cr2Te3 (CT), which are well-known TI and two-dimensional FM, respectively. By using the so-called minor-loop measurement, we have found that the hump structure observed in the CT/BSTS is more likely to originate from two AHE channels. Moreover, by analyzing the scaling behavior of each amplitude of two AHE with the longitudinal resistivities of CT and BSTS, we have found that one AHE is attributed to the extrinsic contribution of CT while the other is due to the intrinsic contribution of BSTS. It implies that the proximity-induced ferromagnetic layer inside BSTS serves as a source of the intrinsic AHE, resulting in the hump structure explained by the two AHE model

Multi-level, Forming Free, Bulk Switching Trilayer RRAM for Neuromorphic Computing at the Edge

Resistive memory-based reconfigurable systems constructed by CMOS-RRAM integration hold great promise for low energy and high throughput neuromorphic computing. However, most RRAM technologies relying on filamentary switching suffer from variations and noise leading to computational accuracy loss, increased energy consumption, and overhead by expensive program and verify schemes. Low ON-state resistance of filamentary RRAM devices further increases the energy consumption due to high-current read and write operations, and limits the array size and parallel multiply & accumulate operations. High-forming voltages needed for filamentary RRAM are not compatible with advanced CMOS technology nodes. To address all these challenges, we developed a forming-free and bulk switching RRAM technology based on a trilayer metal-oxide stack. We systematically engineered a trilayer metal-oxide RRAM stack and investigated the switching characteristics of RRAM devices with varying thicknesses and oxygen vacancy distributions across the trilayer to achieve reliable bulk switching without any filament formation. We demonstrated bulk switching operation at megaohm regime with high current nonlinearity and programmed up to 100 levels without compliance current. We developed a neuromorphic compute-in-memory platform based on trilayer bulk RRAM crossbars by combining energy-efficient switched-capacitor voltage sensing circuits with differential encoding of weights to experimentally demonstrate high-accuracy matrix-vector multiplication. We showcased the computational capability of bulk RRAM crossbars by implementing a spiking neural network model for an autonomous navigation/racing task. Our work addresses challenges posed by existing RRAM technologies and paves the way for neuromorphic computing at the edge under strict size, weight, and power constraints

Tunnel Barrier Engineering of Titanium Oxide for High Non-Linearity of Selector-less Resistive Random Access Memory

In this study, the effect of the oxygen profile and thickness of multiple-layers TiOx on tunnel barrier characteristics was investigated to achieve high non-linearity in low-resistance state current (I-LRS). To form the tunnel barrier in multiple-layer of TiOx, tunnel barrier engineering in terms of the thickness and oxygen profile was attempted using deposition and thermal oxidation times. It modified the defect distribution of the tunnel barrier for effective suppression of ILRS at off-state (1/2V(Read)). By inserting modified tunnel barrier in resistive random access memory, a high non-linear I-LRS was exhibited with a significantly lowered I-LRS for 1/2V(Read). (C) 2014 AIP Publishing LLC.ope

Investigation of the mechanism of the anomalous Hall effects in Cr2Te3/(BiSb)2(TeSe)3 heterostructure

The interplay between ferromagnetism and the non-trivial topology has unveiled intriguing phases in the transport of charges and spins. For example, it is consistently observed the so-called topological Hall effect (THE) featuring a hump structure in the curve of the Hall resistance (Rxy) vs. a magnetic field (H) of a heterostructure consisting of a ferromagnet (FM) and a topological insulator (TI). The origin of the hump structure is still controversial between the topological Hall effect model and the multi-component anomalous Hall effect (AHE) model. In this work, we have investigated a heterostructure consisting of BixSb2−xTeySe3−y (BSTS) and Cr2Te3 (CT), which are well-known TI and two-dimensional FM, respectively. By using the so-called minor-loop measurement, we have found that the hump structure observed in the CT/BSTS is more likely to originate from two AHE channels. Moreover, by analyzing the scaling behavior of each amplitude of two AHE with the longitudinal resistivities of CT and BSTS, we have found that one AHE is attributed to the extrinsic contribution of CT while the other is due to the intrinsic contribution of BSTS. It implies that the proximity-induced ferromagnetic layer inside BSTS serves as a source of the intrinsic AHE, resulting in the hump structure explained by the two AHE model.This work was supported by the Korea Institute of Science and Technol‑ogy (KIST) through 2E31550 and by the National Research Foundation program through NRF-2021M3F3A2A03017782, 2021M3F3A2A01037814, 2021M3F3A2A01037738, 2021R1A2C3011450, and 2020R1A2C200373211,[Innovative Talent Education Program for Smart City] by MOLI