Strain Relief Analysis of InN Quantum Dots Grown on GaN

We present a study by transmission electron microscopy (TEM) of the strain state of individual InN quantum dots (QDs) grown on GaN substrates. Moiré fringe and high resolution TEM analyses showed that the QDs are almost fully relaxed due to the generation of a 60° misfit dislocation network at the InN/GaN interface. By applying the Geometric Phase Algorithm to plan-view high-resolution micrographs, we show that this network consists of three essentially non-interacting sets of misfit dislocations lying along the directions. Close to the edge of the QD, the dislocations curve to meet the surface and form a network of threading dislocations surrounding the system

Structural changes during the natural aging process of InN quantum dots

The natural aging process of InN nanostructures by the formation of indium oxides is examined by transmission electron microscopy related techniques. Uncapped and GaN-capped InN quantum dots (QDs) on GaN/sapphire substrates were grown under the same conditions and kept at room temperature/pressure conditions. The GaN capping layer is found to preserve the InN QDs in the wurtzite phase, avoiding the formation of group-III oxides, while in the uncapped sample, a thin layer of cubic phases are formed that envelops the nucleus of wurtzite InN. These cubic phases are shown to be mainly bcc- In 2 O3 for long aged samples where the nitrogen atoms in the InN surface layers have been substituted by atmospheric oxygen. This process implies the gradual transformation of the In sublattice from hcp to a quasi-fcc structure. Metastable zinc-blende InN phases rich in oxygen atoms are proposed to act as intermediate phases and they are evinced in samples less aged. The large concurrence of interplanar spaces, the twin formation, and the existence of a free surface that facilitates the transformation support this mechanism and would explain the high instability of the InN nanostructures at ambient conditions.Comisión Interministerial de Ciencia y Tecnología (CICYT) MAT2007-60643Junta de Andalucía TEP383 EspañaUnión Europea NMP4-CT-2004- 50010

Temperature-dependent low-frequency vibrational spectra of sodium magnesium chlorophyllin

Terahertz time-domain spectroscopy has been used to investigate the vibrational spectra of polycrystalline sodium magnesium chlorophyllin - one of the natural derivatives of chlorophyll - over the temperature range 88 K–298 K. A number of well-resolved absorption peaks were observed in the frequency range 0.2–2.5 THz, which are interpreted as originating from mixed character of intramolecular and intermolecular vibration modes. As the temperature is increased, the observed absorption features resolve into broader peaks. The peak centered at 1.83 THz shifts towards higher frequencies, indicating that for this feature, significant intermolecular anharmonicity exist

Influence of the growth rate on the morphology of electrodeposited zinc oxide

International audienceWe report on the electrodeposition of ZnO with different surface morphologies. We demonstrate by three different ways that morphology is ruled by the growth rate, and therefore strongly influences the optical properties of the layers. Whereas small size well-connected grains are obtained at high growth rate, the crystals evolve toward large disoriented nanorods since the kinetic of the reaction is hindered. The corresponding RMS roughnesses ranges from 35nm to 119nm, resulting in diffusion of the light from far UV to visible-wavelength. The surface morphology is shown to be directly mastered by electrochemical parameters which enable either a 2D or 3D growth mechanism

In-situ monitoring of CuInSe2 thin films growth by light scattering

International audienceLight scattering spectroscopy, mainly developed for Cu(In,Ga)Se2 thin films growth, has been demonstrated to be an efficient in-situ monitoring tool. It consists of illuminating the substrate surface using a light source and collecting the diffused light with a spectrometer. The on-line information allows monitoring the point of stoichiometry of the grown layer. In this work, we propose an alternative approach of this method, replacing the spectrometer by a standard webcam. This system allows to precisely choose the analyzed area on the substrate surface, which may be the whole sample surface or just a specific zone. We have grown CuInSe2 (CIS) thin films by co-evaporation under vacuum using the three-stage process. We have simultaneously performed CIS growth on both Mo-coated and bare glass substrates within the same growth run, while, on purpose, the scattered light was collected from the Mo-coated substrate. The CIS thin films were characterized by X-ray diffraction, atomic force microscopy, Hall effect measurements, absorption spectroscopy and energy dispersive spectroscopy for composition. By interrupting the CIS growth at different stages of the growth process, we have correlated the scattered light features with the Cu-rich/In-rich transitions and we observe the reproducibility of the scattered light spectra structures