Modeling of Breakdown-Limited Endurance in Spin-Transfer Torque Magnetic Memory under Pulsed Cycling Regime

Perpendicular spin-transfer torque (p-STT) magnetic memory is gaining increasing interest as a candidate for storage-class memory, embedded memory, and possible replacement of static/dynamic memory. All these applications require extended cycling endurance, which should be based on a solid understanding and accurate modeling of the endurance failure mechanisms in the p-STT device. This paper addresses cycling endurance of p-STT memory under pulsed electrical switching. We show that endurance is limited by the dielectric breakdown of the magnetic tunnel junction stack, and we model endurance lifetime by the physical mechanisms leading to dielectric breakdown. The model predicts STT endurance as a function of applied voltage, pulsewidth, pulse polarity, and delay time between applied pulses. The dependence of the endurance on sample area is finally discussed

Nucleic Acid Memory

Nucleic acid memory has a retention time far exceeding electronic memory. As an alternative storage media, DNA surpasses the information density and energy of operation offered by flash memory

Random Number Generation by Differential Read of Stochastic Switching in Spin-Transfer Torque Memory

The true random number generator (TRNG) is a key enabling technology for cryptography and hardware authentication, which are becoming essential features in the era of the Internet of Things (IoT). Here, we present a novel TRNG concept based on the stochastic switching in spin-transfer torque magnetic random access memory (STT-MRAM). The new methodology relies on the STT-MRAM switching variations affecting the current response under applied rectangular or triangular pulses. Random numbers are extracted from the differential read of the integrated current across two stochastic switching cycles. The proposed concept passes all tests in the NIST SP-800-22 suite with no post-processing, thus supporting STT-MRAM as a promising technology for data/hardware security in the IoT