Modeling and simulation of nonlinear electron-hole plasma in deep submicron n-MOSFET devices

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Quantitative analysis and prediction of experimental observations on quasi-static hysteretic metal-ferroelectric-metal-insulator-semiconductor FET and its dynamic behaviour based on Landau theory

10.1088/0268-1242/30/4/045011Semiconductor Science and Technology30

Tunable trench gate power MOSFET: A feasible superjunction device and process technology

IECON Proceedings (Industrial Electronics Conference)1729-733IEPR

Measurement and simulation of hot carrier degradation in PMOSFET by gate capacitance

10.1109/16.381990IEEE Transactions on Electron Devices425928-934IETD

A Simple Technology for Superjunction Device Fabrication: Polyflanked VDMOSFET

10.1109/LED.2002.803770IEEE Electron Device Letters2310627-629EDLE

Self-consistent simulation of quantum dot flash memory device with SiO 2 and HfO 2 dielectrics

10.1142/S0219581X05003036International Journal of Nanoscience42171-17