Improved power conversion efficiency of polycrystalline Si solar cells by nanostructured broadband and omni-directional antireflection coatings

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TiO2 nanohelix gas sensors with enhanced performance and potential application as a building block of electronic noses

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Polarization anisotropy in the light emission of blue GaInN/GaN light-emitting diodes grown on (0001) oriented sapphire substrate

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Dual-blue emitting active regions illustrate enhancements in color rendering ability and luminous efficacy in phosphor-converted white light-emitting diodes

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Carrier transport mechanism of AlGaN/GaN Schottky barrier diodes with various Al mole fractions

The evolution of the dominant carrier transport mechanism of AlxGa1-xN/GaN Schottky barrier diodes with increasing Al mole fraction x (x = 0.2, 0.3, 0.4, and 0.5) is investigated. The Schottky barrier height (SBH) linearly increases with the work function of Schottky metal with the slope factor of similar to 0.5 irrespective of x. The SBH, the ideality factor, and the reverse leakage current, however, show an increasing deviation from the predicted values given by the thermionic-emission theory as x increases. The XPS analysis reveals enhanced predominant incorporation of oxygen donors and an increase in the energy band bending at the surface of AlGaN with increasing x, indicating that the carrier transport by tunnelling through the thin, heavily doped Schottky barrier becomes dominant. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim1187sciescopu

Analysis of the reverse leakage current in AlGaN/GaN Schottky barrier diodes treated with fluorine plasma

The carrier transport mechanism of CF4 plasma-treated AlGaN/GaN Schottky barrier diodes (SBDs) under reverse bias is investigated. The reverse leakage current is reduced by similar to 2 orders of magnitude after the CF4 plasma treatment, but increases exponentially with increasing temperature, indicating that a thermally activated transport mechanism is involved. Based on the activation energy estimated from temperature-dependent current-voltage characteristics and the emission barrier height extracted from Frenkel-Poole emission model, it is suggested that the dominant carrier transport mechanism in the CF4 plasma treated SBDs is the Frenkel-Poole emission from fluorine-related deep-level states into the continuum states of dislocations. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3697684]open112621sciescopu

Effect of structural properties of AlN templates on the optical, electrical, and structural properties of n-type AlGaN

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