Spin-polarized tunneling in ferromagnetic double barrier junctions

Spin-polarized tunneling in FMS/M/FMS double tunnel junctions where FMSs are ferromagnetic semiconductor layers and M is a metal spacer is studied theoretically within the single-site coherent potential approximation (CPA). The exchange interaction between a conduction electron and localized moment of the magnetic ion is treated in the framework of the s-f model. The spin polarization in the FMS layers is observed to oscillates as a function of the number of atomic planes in the spacer layer. Amplitude of these oscillations decreases with increasing the exchange interaction in FMS layers.Comment: 10 pages, LaTex, 4 PS figure

Tunnel Magnetoresistance of a Single-Molecule Junction

Based on the non-equilibrium Green's function (NEGF) technique and the Landauer-B\"{u}ttiker theory, the possibility of a molecular spin-electronic device, which consists of a single C$_{60}$ molecule attached to two ferromagnetic electrodes with finite cross sections, is investigated. By studying the coherent spin-dependent transport through the energy levels of the molecule, it is shown that the tunnel magnetoresistance (TMR) of the molecular junction depends on the applied voltages and the number of contact points between the device electrodes and the molecule. The TMR values more than 60% are obtained by adjusting the related parameters.Comment: 5 pages, 3 figure

Spin currents and magnetoresistance of graphene-based magnetic junctions

Using the tight-binding approximation and the nonequilibrium Green's function approach, we investigate the coherent spin-dependent transport in planar magnetic junctions consisting of two ferromagnetic (FM) electrodes separated by a graphene flake (GF) with zigzag or armchair interfaces. It is found that the electron conduction strongly depends on the geometry of contact between the GF and the FM electrodes. In the case of zigzag interfaces, the junction demonstrates a spin-valve effect with high magnetoresistance (MR) ratios and shows negative differential resistance features for a single spin channel at positive gate voltage. In the case of armchair interfaces, the current-voltage characteristics behave linearly at low bias voltages and hence, both spin channels are in on state with low MR ratios.Comment: 6 pages, 5 figure