Electrical switching of magnetic polarity in a multiferroic BiFeO3 device at room temperature

We have directly imaged reversible electrical switching of the cycloidal rotation direction (magnetic polarity) in a (111)-BiFeO3 epitaxial-film device at room temperature by non-resonant x-ray magnetic scattering. Consistent with previous reports, fully relaxed (111)-BiFeO3 epitaxial films consisting of a single ferroelectric domain were found to comprise a sub-micron-scale mosaic of magneto-elastic domains, all sharing a common direction of the magnetic polarity, which was found to switch reversibly upon reversal of the ferroelectric polarization without any measurable change of the magneto-elastic domain population. A real-space polarimetry map of our device clearly distinguished between regions of the sample electrically addressed into the two magnetic states with a resolution of a few tens of micron. Contrary to the general belief that the magneto-electric coupling in BiFeO3 is weak, we find that electrical switching has a dramatic effect on the magnetic structure, with the magnetic moments rotating on average by 90 degrees at every cycle.Comment: 6 pages, 5 figures; corrected figure

Strain engineering a multiferroic monodomain in thin-film BiFeO3

The presence of domains in ferroic materials can negatively affect their macroscopic properties and hence their usefulness in device applications. From an experimental perspective, measuring materials comprising multiple domains can complicate the interpretation of material properties and their underlying mechanisms. In general, BiFeO3 films tend to grow with multiple magnetic domains and often contain multiple ferroelectric and ferroelastic domain variants. By growing (111)-oriented BiFeO3 films on an orthorhombic TbScO3 substrate, we are able to overcome this, and, by exploiting the magnetoelastic coupling between the magnetic and crystal structures, bias the growth of a given magnetic-, ferroelectric-, and structural-domain film. We further demonstrate the coupling of the magnetic structure to the ferroelectric polarisation by showing the magnetic polarity in this domain is inverted upon 180° ferroelectric switching.</p

Coherent magnetoelastic domains in multiferroic films

The physical properties of epitaxial films can fundamentally differ from those of bulk single crystals even above the critical thickness. By a combination of non-resonant x-ray magnetic scattering, neutron diffraction and vector-mapped x-ray magnetic linear dichroism photoemission electron microscopy, we show that epitaxial (111)-BiFeO3 films support sub-micron antiferromagnetic domains, which are magneto-elastically coupled to a coherent crystallographic monoclinic twin structure. This unique texture, which is absent in bulk single crystals, should enable control of magnetism in BiFeO3 film devices via epitaxial strain

The effect of divorce and single costs on marital status Theory and evidence from the United Kingdom

SIGLEAvailable from British Library Document Supply Centre- DSC:9349.95704(SU-BS-DE-WP--95/1) / BLDSC - British Library Document Supply CentreGBUnited Kingdo

Strain engineering a multiferroic monodomain in thin-film BiFeO₃

The presence of domains in ferroic materials can negatively affect their macroscopic properties and hence their usefulness in device applications. From an experimental perspective, the measurement of materials comprising multiple domains can complicate the interpretation of the material properties and their underlying mechanisms. In general, BiFeO3 films tend to grow with multiple magnetic domains and often contain multiple ferroelectric- and ferroelastic-domain variants. By growing (111)-oriented BiFeO3 films on an orthorhombic TbScO3 substrate, we are able to overcome this and, by exploiting the magnetoelastic coupling between the magnetic and crystal structures, bias the growth of a given magnetic-, ferroelectric-, and structural-domain film. We further demonstrate the coupling of the magnetic structure to the ferroelectric polarization by showing that the magnetic polarity in this domain is inverted upon 180∘ ferroelectric switching