17.2% efficient CdSe_xTe_1−x solar cell with (In_xGa_1−x)₂O₃ emitter on lightweight and flexible glass

High-efficiency, lightweight, and flexible solar cells are sought for a variety of applications particularly when high power density and flexible form factors are desired. Development of solar cells on flexible substrates may also offer production advantages in roll-to-roll or sheet-to-sheet processes. Here, we report device efficiencies of 17.2% and 14.6%, under AM1.5G and AM0 irradiances, respectively, for a flexible, lightweight, CdTe-based solar cell. To advance the efficiency relative to the highest previously reported AM1.5G value of 16.4%, we used an indium gallium oxide (IGO) emitter layer on a cadmium stannate (CTO) transparent conductor, which was deposited on 100-μm thick Corning® Willow® Glass. A sputtered CdSe layer was employed to incorporate Se into a CdTe absorber that was deposited by close-space sublimation, and CuSCN was used as a hole transport layer between the CdTe and the back metal electrode. The IGO and CTO layers remained intact during the high temperature film processing as seen in cross-sectional imaging and elemental mapping. This device configuration offers great promise for building-integrated photovoltaics, space applications, and higher rate manufacturing.</p

17.2% efficient CdSe_xTe_1−x solar cell with (In_xGa_1−x)₂O₃ emitter on lightweight and flexible glass

High-efficiency, lightweight, and flexible solar cells are sought for a variety of applications particularly when high power density and flexible form factors are desired. Development of solar cells on flexible substrates may also offer production advantages in roll-to-roll or sheet-to-sheet processes. Here, we report device efficiencies of 17.2% and 14.6%, under AM1.5G and AM0 irradiances, respectively, for a flexible, lightweight, CdTe-based solar cell. To advance the efficiency relative to the highest previously reported AM1.5G value of 16.4%, we used an indium gallium oxide (IGO) emitter layer on a cadmium stannate (CTO) transparent conductor, which was deposited on 100-μm thick Corning® Willow® Glass. A sputtered CdSe layer was employed to incorporate Se into a CdTe absorber that was deposited by close-space sublimation, and CuSCN was used as a hole transport layer between the CdTe and the back metal electrode. The IGO and CTO layers remained intact during the high temperature film processing as seen in cross-sectional imaging and elemental mapping. This device configuration offers great promise for building-integrated photovoltaics, space applications, and higher rate manufacturing.</p