A Measurement of the Effect of Intrinsic Film Stress on the Overall Rate of Thermal Oxidation of Silicon

The effects of intrinsic film stress on Si oxidation kinetics has been receiving considerable attention in recent years. Oxidation models have appeared that relate the Si-SiO 2 interfacial intrinsic stress to both the interface reaction between oxidant and Si and to a stress altered oxidant transport. The experimental measurement of the film stress itself has been reported, although to date the data is rather sparse. Recently, in our laboratory more extensive intrinsic stress measurements have been made and these measurements will be reported separately. So while the existence of a compressive intrinsic SiO2 film stress has been experimentally verified, the experimental verification of the effects of the stress on oxidation kinetics remains a matter of speculation within the various models

Photon interferometry and size of the hot zone in relativistic heavy ion collisions

The parameters obtained from the theoretical analysis of the single photon spectra observed by the WA98 collaboration at SPS energies have been used to evaluate the two photon correlation functions. The single photon spectra and the two photon correlations at RHIC energies have also been evaluated, taking into account the effects of the possible spectral change of hadrons in a thermal bath. We find that the ratio $R_{side}/R_{out} \sim 1$ for SPS and $R_{side}/R_{out} <1$ for RHIC energy.Comment: text changed, figures adde