The hardness-duration correlation in the two classes of gamma-ray bursts

The well-known hardness-duration correlation of gamma-ray bursts (GRBs) is investigated with the data of the 4B catalog. We find that, while the hardness ratio and the duration are obviously correlated for the entire set of the 4B catalog, they are not at all correlated for the two subsets divided at the duration of 2 seconds. However, for other subsets with comparable sizes, the two quantities are significantly correlated. The following conclusions are then reached: (1) the existence of two classes of GRBs is confirmed; (2) the hardness ratio and the duration are not at all correlated for any of the two classes; (3) different classes of GRBs have different distributions of the hardness ratio and the duration and it is this difference that causes the correlation between the two quantities for the entire set of the bursts.Comment: 5 pages, 1 figure, accepted for publication in PAS

Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire

Stress and its effects on optical properties of GaN epilayers grown in Si(111), 6H-SiC(0001), and c-plane sapphire were investigated. Large tensile stress was present in GaN epilayers grown on Si and 6H-SiC, and a small compressive stress appeared in the film grown on sapphire. The results showed that the thermal mismatch between the epilayers and the substrates plays a major role in determining the residual strain in the films.published_or_final_versio

Thermodynamics of carrier distribution within localized electronic states with a broad Gaussian energy distribution and its effect on luminescence behavior of localized states

published_or_final_versio

Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers

The broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers was discussed. The coupling parameters between exciton and acoustic and longitudinal optical phonons were obtained for both structures. The analysis showed that the coupling constants of both exciton-acoustic optial phonon coupling and exciton-longitudinal optical phonon coupling for zinc-blende GaN were almost twice as much as the corresponding values of wurtzite GaN.published_or_final_versio

Evidence for a Type-II band alignment between cubic and hexagonal phases of GaN

The study of photoluminescence spectra of a series of thin, undoped, hexagonal GaN films containing cubic GaN inclusions grown by molecular-beam epitaxy on 6H-SiC was presented. It was shown that an emission peak at ∼3.17 eV in thin, hexagonal GaN films exhibits behaviors typical of a spatially indirect transition. The values of the band offsets extracted from the data were in good agreement with theoretical predictions.published_or_final_versio

Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates

Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates was investigated. The GaN epilayers grown with plasma-assisted molecular-beam epitaxy were optically characterized by photoluminescence and excitation spectra. Results showed that the localized states which were induced by the structural defect located about 100 meV above the maximum valence band of GaN.published_or_final_versio

Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys

Temperature-dependent photoluminescence measurements have been carried out in zinc-blende InGaN epilayers grown on GaAs substrates by metalorganic vapor-phase epitaxy. An anomalous temperature dependence of the peak position of the luminescence band was observed. Considering thermal activation and the transfer of excitons localized at different potential minima, we employed a model to explain the observed behavior. A good agreement between the theory and the experiment is achieved. At high temperatures, the model can be approximated to the band-tail-state emission model proposed by Eliseev et al. [Appl. Phys. Lett. 71, 569 (1997)]. © 2001 American Institute of Physics.published_or_final_versio

Different origins of visible luminescence in ZnO nanostructures fabricated by the chemical and evaporation methods

Zinc oxide nanostructures were fabricated using chemical and thermal evaporation methods. Scanning electron microscopy (SEM), x-ray diffraction, photoluminescence, and electron paramagnetic resonance (EPR) spectroscopy were used to study the properties of fabricated nanostructures. The nanostructures fabricated by evaporationg methods exhibited green PL from surface centers. The results show that the luminescence in the visible region has different peak positions in samples prepared by chemical and evaporation methods.published_or_final_versio

The fate of trace organic contaminants during anaerobic digestion of primary sludge: A pilot scale study

© 2018 A pilot-scale study was conducted to investigate the fate of trace organic contaminants (TrOCs) during anaerobic digestion of primary sludge. Of the 44 TrOCs monitored, 24 were detected in all primary sludge samples. Phase distribution of TrOCs was correlated well with their hydrophobicity (>67% mass in the solid phase when LogD > 1.5). The pilot-scale anaerobic digester achieved a steady performance with a specific methane yield of 0.39–0.92 L/gVSremoved and methane composition of 63–65% despite considerable variation in the primary sludge. The fate of TrOCs in the aqueous and solid phases was governed by their physicochemical properties. Biotransformation was significant (>83%) for five TrOCs with logD 1.5 were poorly removed under anaerobic conditions. Sorption onto the solid phase appears to impede the biodegradation of these TrOCs