Logarithmic behavior of degradation dynamics in metal--oxide semiconductor devices

In this paper the authors describe a theoretical simple statistical modelling of relaxation process in metal-oxide semiconductor devices that governs its degradation. Basically, starting from an initial state where a given number of traps are occupied, the dynamics of the relaxation process is measured calculating the density of occupied traps and its fluctuations (second moment) as function of time. Our theoretical results show a universal logarithmic law for the density of occupied traps $\bar{} \sim \phi (T,E_{F}) (A+B \ln t)$, i.e., the degradation is logarithmic and its amplitude depends on the temperature and Fermi Level of device. Our approach reduces the work to the averages determined by simple binomial sums that are corroborated by our Monte Carlo simulations and by experimental results from literature, which bear in mind enlightening elucidations about the physics of degradation of semiconductor devices of our modern life

Notes on the Two-brane Model with Variable Tension

Motivated by possible extensions of the braneworld models with two branes, we investigate some consequences of a variable brane tension using the well established results on consistency conditions. By a slight modification of the usual stress-tensor used in order to derive the braneworld sum rules, we find out some important constraints obeyed by time dependent brane tensions. In particular it is shown that the tensions of two Randall-Sundrum like branes obeying, at the same time, an Eotvos law, aggravate the fine tuning problem. Also, it is shown that if the hidden brane tension obeys an Eotvos law, then the visible brane has a mixed behavior allowing a bouncing-like period at early times while it is dominated by an Eotvos law nowadays. To finalize, we discuss some qualitative characteristics which may arise in the scope of dynamical brane tensions, as anisotropic background and branons production.Comment: 7 pages, 1 figure, accepted for publication in Physical Review