Inductively Coupled Plasma-Induced Etch Damage of GaN p-n Junctions

Plasma-induced etch damage can degrade the electrical and optical performance of III-V nitride electronic and photonic devices. We have investigated the etch-induced damage of an Inductively Coupled Plasma (ICP) etch system on the electrical performance of mesa-isolated GaN pn-junction diodes. GaN p-i-n mesa diodes were formed by Cl{sub 2}/BCl{sub 3}/Ar ICP etching under different plasma conditions. The reverse leakage current in the mesa diodes showed a strong relationship to chamber pressure, ion energy, and plasma flux. Plasma induced damage was minimized at moderate flux conditions ({le} 500 W), pressures {ge}2 mTorr, and at ion energies below approximately -275 V

Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design

The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain {beta} is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of the base resistivity on high-frequency characteristics is investigated for Npn AlGaN/GaN devices. Optimized predictions with maximum oscillation frequency value as high as f{sub MAX} = 20 GHz and a unilateral power gain--U = 25 dB make this bipolar GaN-based technology compatible with communication applications. Simulation results reveal that the restricted amount of free carriers from the p-doped emitter limits Pnp's DC performances operating in common emitter configuration. A preliminary analysis of r.f. characteristics for the Pnp counterpart indicates limited performance mainly caused by the degraded hole mobility

Silicon/Pyrex Planar Microbattery A Silicon Process-Compatible Micro-Power Source

The design, fabrication, and performance of a planar microbattery made from a silicon wafer with a bonded lid are presented. The battery is designed with two compartments, separated by four columns of micro-posts. These posts are 3 or 5 micrometers in diameter. The posts permit transport of liquid electrolyte, but stop particles of battery material from each compartment from mixing. The anode and cathode battery compartments, the posts, fill holes, and conductive vias are all made using high-aspect-ratio reactive ion (Bosch) etching. After the silicon wafer is completed, it is anodically bonded or adhesive bonded to a Pyrex{reg_sign} wafer lid. The battery materials are made from micro-disperse particles that are 3-5 micrometers in diameter. The lithium-ion chemistry is microcarbon mesobeads and lithium cobalt oxide. The battery capacity is 1.83 micro-amp-hrs/cm{sup 2} at a discharge rate of 25 microamps

Microfabrication of membrane-based devices by HARSE and combined HARSE/wet etching

Deep-reactive ion etching (DRIE) of silicon, also known as high-aspect-ratio silicon etching (HARSE), is distinguished by fast etch rates ({approximately}3 {micro}m/min), crystal orientation independence, anisotropy, vertical sidewall profiles and CMOS compatibility. By using through-wafer HARSE and stopping on a dielectric film placed on the opposite side of the wafer, freestanding dielectric membranes were produced. Dielectric membrane-based sensors and actuators fabricated in this way include microhotplates, flow sensors, valves and magnetically-actuated flexural plate wave (FPW) devices. Unfortunately, low-stress silicon nitride, a common membrane material, has an appreciable DRI etch rate. To overcome this problem HARSE can be followed by a brief wet chemical etch. This approach has been demonstrated using KOH or HF/Nitric/Acetic etchants, both of which have significantly smaller etch rates on silicon nitride than does DRIE. Composite membranes consisting of silicon dioxide and silicon nitride layers are also under evaluation due to the higher DRIE selectivity to silicon dioxide

Microfabrication of membrane-based devices by deep-reactive ion etching (DRIE) of silicon

Deep reactive ion etching (DRIE) of silicon was utilized to fabricate dielectric membrane-based devices such as microhotplates, valves and flexural plate wave (FPW) devices. Through-wafer DRIE is characterized by fast etch rates ({approximately} 3 {micro}m/min), crystal orientation independence, vertical sidewall profiles and CMOS compatibility. Low-stress silicon nitride, a popular membrane material, has an appreciable DRIE etch rate. To overcome this limitations DRIE can be accompanied by a brief wet chemical etch. This approach has been demonstrated using KOH or HF/Nitric/Acetic etchants, both of which have significantly lower etch rates on silicon nitride than does DRIE. The DRIE etch properties of composite membranes consisting of silicon dioxide and silicon nitride layers are also under evaluation due to the higher DRIE selectivity to silicon dioxide

Design and performance of nitride-based UV LEDs

In this paper, the authors overview several of the critical materials growth, design and performance issues for nitride-based UV (< 400 nm) LEDs. The critical issue of optical efficiency is presented through temperature-dependent photoluminescence studies of various UV active regions. These studies demonstrate enhanced optical efficiencies for active regions with In-containing alloys (InGaN, AlInGaN). The authors discuss the trade-off between the challenging growth of high Al containing alloys (AlGaN, AlGaInN), and the need for sufficient carrier confinement in UV heterostructures. Carrier leakage for various composition AlGaN barriers is examined through a calculation of the total unconfined carrier density in the quantum well system. They compare the performance of two distinct UV LED structures: GaN/AlGaN quantum well LEDs for {lambda}< 360 nm emission, and InGaN/AlGaInN quantum well LEDs for 370 nm <{lambda}< 390 nm emission

Surface Micromachine Microfluidics: Design, Fabrication, Packaging, and Characterization

The field of microfluidics is undergoing rapid growth in terms of new device and system development. Among the many methods of fabricating microfluidic devices and systems, surface micromachining is relatively underrepresented due to difficulties in the introduction of fluids into the very small channels produced, packaging problems, and difficulties in device and system characterization. The potential advantages of using surface micromachining including compatibility with the existing integrated circuit tool set, integration of electronic sensing and actuation with microfluidics, and fluid volume minimization. In order to explore these potential advantages we have developed first generation surface micromachined microfluidic devices (channels) using an adapted pressure sensor fabrication process to produce silicon nitride channels, and the SUMMiT process to produce polysilicon channels. The channels were characterized by leak testing and flow rate vs. pressure measurements. The fabrication processes used and results of these tests are reported in this paper

A Concept for Zero-Alignment Micro Optical Systems

We are developing a method of constructing compact, three-dimensional photonics systems consisting of optical elements, e.g., lenses and mirrors, photo-detectors, and light sources, e.g., VCSELS or circular-grating lasers. These optical components, both active and passive, are mounted on a lithographically prepared silicon substrate. We refer to the substrate as a micro-optical table (MOT) in analogy with the macroscopic version routinely used in optics laboratories. The MOT is a zero-alignment, microscopic optical-system concept. The position of each optical element relative to other optical elements on the MOT is determined in the layout of the MOT photomask. Each optical element fits into a slot etched in the silicon MOT. The slots are etched using a high-aspect-ratio silicon etching (HARSE) process. Additional positioning features in each slot's cross-section and complementary features on each optical element permit accurate placement of that element's aperture relative to the MOT substrate. In this paper we present the results of the first fabrication and micro-assembly experiments of a silicon-wafer based MOT. Based on these experiments, estimates of position accuracy are reported. We also report on progress in fabrication of lens elements in a hybrid sol-gel material (HSGM). Diffractive optical elements have been patterned in a 13-micron thick HSGM layer on a 150-micron thick soda-lime glass substrate. The measured ms surface roughness was 20 nm. Finally, we describe modeling of MOT systems using non-sequential ray tracing (NSRT)

Development of Magnetically Excited Flexural Plate Wave Devices for Implementation as Physical, Chemical, and Acoustic Sensors, and as Integrated Micro-Pumps for Sensored Systems

The magnetically excited flexural plate wave (mag-FPW) device has great promise as a versatile sensor platform. FPW's can have better sensitivity at lower operating frequencies than surface acoustic wave (SAW) devices. Lower operating frequency (< 1 MHz for the FPW versus several hundred MHz to a few GHz for the SAW device) simplifies the control electronics and makes integration of sensor with electronics easier. Magnetic rather than piezoelectric excitation of the FPW greatly simplifies the device structure and processing by eliminating the need for piezoelectric thin films, also simplifying integration issues. The versatile mag-FPW resonator structure can potentially be configured to fulfill a number of critical functions in an autonomous sensored system. As a physical sensor, the device can be extremely sensitive to temperature, fluid flow, strain, acceleration and vibration. By coating the membrane with self-assembled monolayers (SAMs), or polymer films with selective absorption properties (originally developed for SAW sensors), the mass sensitivity of the FPW allows it to be used as biological or chemical sensors. Yet another critical need in autonomous sensor systems is the ability to pump fluid. FPW structures can be configured as micro-pumps. This report describes work done to develop mag-FPW devices as physical, chemical, and acoustic sensors, and as micro-pumps for both liquid and gas-phase analytes to enable new integrated sensing platform