A Comparison between Thin-Film Transistors Deposited by Hot-Wire Chemical Vapor Deposition and PECVD

The effect of new growth techniques on the mobility and stability of amorphous silicon (a-Si:H) thin film transistors (TFTs) has been studied. It was suggested that the key parameter controlling the field-effect mobility and stability is the intrinsic stress in the a-Si:H layer. Amorphous and microcrystalline silicon films were deposited by radiofrequency plasma enhanced chemical vapor deposition (RF-PECVD) and hot-wire chemical vapor deposition (HW-CVD) at 100 ºC and 25 ºC. Structural properties of these films were measured by Raman Spectroscopy. Electronic properties were measured by dark conductivity, σd, and photoconductivity, σph. For amorphous silicon films deposited by RF-PECVD on PET, photosensitivity's of >105 were obtained at both 100 º C and 25 ºC. For amorphous silicon films deposited by HW-CVD, a photosensitivity of > 105 was obtained at 100 ºC. Microcrystalline silicon films deposited by HW-CVD at 95% hydrogen dilution show σph~ 10-4 Ω-1cm-1, while maintaining a photosensitivity of ~102 at both 100 ºC and 25 ºC. Microcrystalline silicon films with a large crystalline fraction (> 50%) can be deposited by HW-CVD all the way down to room temperature

The Role of SiO2 Gas in the Operation of Anti-Corrosion Coating Produced by PVD

This study examined theSiO2 gas present in the coatings used in corrosion industry.These layers have been created by physical vapor deposition (PVD), with an appropriate performance. Sublimation of SiO2is used to protect PVD aluminum flakes from water corrosionand to generate highly porous SiO2 flakes with holes in the nanometer range. SiOx/Al/SiOx sandwiches were made as well as Ag loaded porous SiO2 as antimicrobial filler

Characterization of the SiO2 film deposited by using plasma enhanced chemical vapor deposition (PECVD) with TEOS/N2/O2

The purpose of this study was to examine how certain parameters like temperature, pressure, and gas composition affect the characteristics of SiO2 film by Plasma Enhanced Chemical Vapor Deposition (PECVD). We used of low temperature and an inductively coupled plasma (ICP) for various with gas mixtures of TEOS/N2/O2 at a given RF power and dc bias voltage. For the gas mixture with 40 sccm of N2 in TEOS, 100 standard cubic centimeters per minute (sccm) of N2, and 500 sccm of O2, transparent and scratch-resistant SiO2 could be deposited with a deposition rate of 30 nm/min when RF power of 500 W and a dc-bias voltage of 350V were applied. The characteristics of the deposited SiO2, such as the composition, the binding energy, etc. were compared with the SiO2 deposited by using thermal CVD and evaporation. It was found that the SiO2 deposited by PECVD with TEOS/N2/O2 exhibited properties typical of SiO2 deposited applying thermal CVD and evaporation. The surface roughness of the 100 nm-thick SiO2 deposited by PECVD was similar to that of the substrate

The Role of SiO2 Gas in the Operation of Anti-Corrosion Coating Produced by PVD

This study examined theSiO2 gas present in the coatings used in corrosion industry.These layers have been created by physical vapor deposition (PVD), with an appropriate performance. Sublimation of SiO2is used to protect PVD aluminum flakes from water corrosionand to generate highly porous SiO2 flakes with holes in the nanometer range. SiOx/Al/SiOx sandwiches were made as well as Ag loaded porous SiO2 as antimicrobial filler

Properties of Silicon Dioxide Film Deposited By PECVD at Low Temperature/Pressure

conventional plasma enhanced chemical vapor deposition (PECVD) at low temperature/pressure with silane (SiH4) and nitrous oxide (N2O) as precursor gases. The ellipsometer and stress measurement system were used to test the thickness and refractive index uniformity of the SiO2 film fabricated. The effects of radio frequency (RF) power chamber pressure and N2O/SiH4 flow ratio on the properties of SiO2 film were studied. The results show that the refractive index of SiO2 film is mainly determined by N2O/SiH4 flow ratio .Moreover, the formation of SiO2 thin films is confirmed by Fourier transform infrared (FTIR) spectroscopy. The thickness and refractive indices of the films measured by ellipsometry C-V measurement show that the electrical properties are directly related to process parameters and Si/SiO2 interface. The MIS structures were also fabricated from optimized SiO2 layer to study C-V measurement and to estimate interface, oxide and effective border traps density. The deposited SiO2 films have good uniformity, compact structure, high deposition rate, low deposition temperature and controllable stress, which can be widely, used in semiconductor devices.  http://dx.doi.org/10.5937/metmateng1402089

A Comparison between Thin-Film Transistors Deposited by Hot-Wire Chemical Vapor Deposition and PECVD

The effect of new growth techniques on the mobility and stability of amorphous silicon (a-Si:H) thin film transistors (TFTs) has been studied. It was suggested that the key parameter controlling the field-effect mobility and stability is the intrinsic stress in the a-Si:H layer. Amorphous and microcrystalline silicon films were deposited by radiofrequency plasma enhanced chemical vapor deposition (RF-PECVD) and hot-wire chemical vapor deposition (HW-CVD) at 100 ºC and 25 ºC. Structural properties of these films were measured by Raman Spectroscopy. Electronic properties were measured by dark conductivity, σd, and photoconductivity, σph. For amorphous silicon films deposited by RF-PECVD on PET, photosensitivity's of >105 were obtained at both 100 º C and 25 ºC. For amorphous silicon films deposited by HW-CVD, a photosensitivity of > 105 was obtained at 100 ºC. Microcrystalline silicon films deposited by HW-CVD at 95% hydrogen dilution show σph~ 10-4 Ω-1cm-1, while maintaining a photosensitivity of ~102 at both 100 ºC and 25 ºC. Microcrystalline silicon films with a large crystalline fraction (> 50%) can be deposited by HW-CVD all the way down to room temperature

Characterization of the SiO2 film deposited by using plasma enhanced chemical vapor deposition (PECVD) with TEOS/N2/O2

The purpose of this study was to examine how certain parameters like temperature, pressure, and gas composition affect the characteristics of SiO2 film by Plasma Enhanced Chemical Vapor Deposition (PECVD). We used of low temperature and an inductively coupled plasma (ICP) for various with gas mixtures of TEOS/N2/O2 at a given RF power and dc bias voltage. For the gas mixture with 40 sccm of N2 in TEOS, 100 standard cubic centimeters per minute (sccm) of N2, and 500 sccm of O2, transparent and scratch-resistant SiO2 could be deposited with a deposition rate of 30 nm/min when RF power of 500 W and a dc-bias voltage of 350V were applied. The characteristics of the deposited SiO2, such as the composition, the binding energy, etc. were compared with the SiO2 deposited by using thermal CVD and evaporation. It was found that the SiO2 deposited by PECVD with TEOS/N2/O2 exhibited properties typical of SiO2 deposited applying thermal CVD and evaporation. The surface roughness of the 100 nm-thick SiO2 deposited by PECVD was similar to that of the substrate

Properties of Silicon Dioxide Film Deposited By PECVD at Low Temperature/Pressure

conventional plasma enhanced chemical vapor deposition (PECVD) at low temperature/pressure with silane (SiH4) and nitrous oxide (N2O) as precursor gases. The ellipsometer and stress measurement system were used to test the thickness and refractive index uniformity of the SiO2 film fabricated. The effects of radio frequency (RF) power chamber pressure and N2O/SiH4 flow ratio on the properties of SiO2 film were studied. The results show that the refractive index of SiO2 film is mainly determined by N2O/SiH4 flow ratio .Moreover, the formation of SiO2 thin films is confirmed by Fourier transform infrared (FTIR) spectroscopy. The thickness and refractive indices of the films measured by ellipsometry C-V measurement show that the electrical properties are directly related to process parameters and Si/SiO2 interface. The MIS structures were also fabricated from optimized SiO2 layer to study C-V measurement and to estimate interface, oxide and effective border traps density. The deposited SiO2 films have good uniformity, compact structure, high deposition rate, low deposition temperature and controllable stress, which can be widely, used in semiconductor devices. http://dx.doi.org/10.5937/metmateng1402089

A Comparison between Thin-Film Transistors Deposited by Hot-Wire Chemical Vapor Deposition and PECVD

The effect of new growth techniques on the mobility and stability of amorphous silicon (a-Si:H) thin film transistors (TFTs) has been studied. It was suggested that the key parameter controlling the field-effect mobility and stability is the intrinsic stress in the a-Si:H layer. Amorphous and microcrystalline silicon films were deposited by radiofrequency plasma enhanced chemical vapor deposition (RF-PECVD) and hot-wire chemical vapor deposition (HW-CVD) at 100 ºC and 25 ºC. Structural properties of these films were measured by Raman Spectroscopy. Electronic properties were measured by dark conductivity, σd, and photoconductivity, σph. For amorphous silicon films deposited by RF-PECVD on PET, photosensitivity's of >105 were obtained at both 100 º C and 25 ºC. For amorphous silicon films deposited by HW-CVD, a photosensitivity of > 105 was obtained at 100 ºC. Microcrystalline silicon films deposited by HW-CVD at 95% hydrogen dilution show σph~ 10-4 Ω-1cm-1, while maintaining a photosensitivity of ~102 at both 100 ºC and 25 ºC. Microcrystalline silicon films with a large crystalline fraction (> 50%) can be deposited by HW-CVD all the way down to room temperature

Properties of TiC Coating by Pulsed DC PACVD

In the PACVD technique, temperature and gas flow rate are two important parameters affecting the coating characteristics. Effect of these parameters on mechanical behaviors of TiC coating that was deposited on hot work tool steel (H13) was investigated in this paper. We analyzed TiC coating composition and structure with grazing incidence X-ray diffraction (GIXRD) and Fourier transformation infrared spectroscopy (FTIR). The mechanical properties of the coatings, such as microhardness, wear resistance, and surface roughness, were studied with Knoop hardness indentation, pin on disk wear tests, and atomic force microscopy, respectively. When the deposition temperature decreased from 490°C to 450°C and the CH4 to TiCl4 flow rate ratio was also increased from 1.5 to 6, TiC coating color changed from dark gray to silver. The best mechanical properties such as a high hardness (27 GPa), wear resistance, and low surface roughness were related to the coating that was deposited at 450°C