Mouse neuroblastoma cell-based model and the effect of epileptic events on calcium oscillations and neural spikes

Recently, mouse neuroblastoma cells have been considered as an attractive model for the study of human neurological and prion diseases, and they have been intensively used as a model system in different areas. For example, the differentiation of neuro2a (N2A) cells, receptor-mediated ion current, and glutamate-induced physiological responses have been actively investigated with these cells. These mouse neuroblastoma N2A cells are of interest because they grow faster than other cells of neural origin and have a number of other advantages. The calcium oscillations and neural spikes of mouse neuroblastoma N2A cells in epileptic conditions are evaluated. Based on our observations of neural spikes in these cells with our proposed imaging modality, we reported that they can be an important model in epileptic activity studies. We concluded that mouse neuroblastoma N2A cells produce epileptic spikes in vitro in the same way as those produced by neurons or astrocytes. This evidence suggests that increased levels of neurotransmitter release due to the enhancement of free calcium from 4-aminopyridine causes the mouse neuroblastoma N2A cells to produce epileptic spikes and calcium oscillations.open0

Magnetic Impurities in the Pnictide Superconductor Ba1−x_{1-x}Kx_{x}Fe2_{2}As2_{2}

NMR measurements have been performed on single crystals of Ba$_{1-x}$K$_{x}$Fe$_2$As$_2$ (x = 0, 0.45) and CaFe$_2$As$_2$ grown from Sn flux. The Ba-based pnictide crystals contain significant amounts of Sn in their structure, $\sim 1$%, giving rise to magnetic impurity effects evident in the NMR spectrum and in the magnetization. Our experiments show that the large impurity magnetization is broadly distributed on a microscopic scale, generating substantial magnetic field gradients. There is a concomitant 20% reduction in the transition temperature which is most likely due to magnetic electron scattering. We suggest that the relative robustness of superconductivity ($x=0.45$) in the presence of severe magnetic inhomogeneity might be accounted for by strong spatial correlations between impurities on the coherence length scale.Comment: 14 pages, 6 figures (submitted to New Journal of Physics

Low Frequency Noise in SiC Double-Implant MOSFETs

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Improved Thermal Stability and Lower Sheet Resistance of NiSi with Carbon Pre-silicidation Implant

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The Effect of Carbon Pre-Silicidation Implant (C-PSI) on the Thermal Stability and the Contact Resistivity of Titanium Silicide (TiSi)

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Spatial Multiplexing Method for Achromatic Metalens

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Multiwavelength metalens by spatial multiplexing at visible wavelengths

We theoretically demonstrate a multiwavelength metalens that operates concurrently at three visible wavelengths (lambda = 400, 600, and 800 nm). Multiwavelength metalenses are designed by a simple integration of metalens components by a spatial interleaving method (SIM) or by a symmetric linear array method (SLAM). The designed metalenses focus light to the same focal distance at three visible wavelengths with near diffraction-limited full width at half-maximum. At wavelengths of 400, 600, and 800 nm, the SIM metalens had focusing efficiencies of 32.6%, 43.6%, and 51.7%, respectively, and the SLAM metalens had focusing efficiencies of 35.6%, 43.8%, and 56.4%, respectively. These methods can provide a simple guideline to increase the operating wavelengths of metalenses.11Nsciescopu

Systematic analysis of oxide trap distribution of 4H-SiC DMOSFETs using TSCIS and its correlation with BTI and SILC behavior

The spatial position and energy level of the effective oxide trap in SiC DMOSFET were investigated using Trap Spectroscopy by Charge Injection and Sensing (TSCIS) method. It was found that the oxygen vacancy traps at 1.7 eV above from the valence band of SiO2 make threshold voltage (V-th) shift under high negative gate bias stress condition. To further understanding the extracted oxide trap, the repetitive negative stress and recovery test at V-G = +/- 40 V were executed. The results confirm that Vth and subthreshold swing (SS) change were caused by the process induced pre-existed hole traps instead of the stress induced trap generation. This hole trapping also reduced the Stress Induced Leakage Current (SILC) after the negative bias stress.110Nsciescopu

Air-Gap-Embedded Robust Hazy Films to Reduce the Screen-Door Effect in Virtual Reality Displays

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Air bubbles embedded robust hazy film for reducing angular color shift in cavity organic light-emitting diodes

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