4 research outputs found
Carrier relaxation in Si/SiO quantum dots
Carrier relaxation due to both optical and nonradiative intraband transitions
in silicon quantum dots in SiO has been considered. Interaction of confined
holes with optical phonons has been studied. The Huang-Rhys factor is
calculated for such transitions. The probability of intraband transition of a
confined hole emitting several optical phonons is estimated.Comment: 8 pages, 2 figures, submitted as an extended abstract to the E-MRS
Spring Meeting 200
A Study on Equivalent Spherical Structure of Buckyball-C 60 Based on Continuum Shell Model
Quantum wells with zero valence-band offset: Drastic enhancement of forbidden excitonic transitions.
International audienceForbidden e1hh3 and e1lh3 exciton transitions (where hh and lh are heavy-hole and light-hole, respectively) appear in magnetooptical spectra of quantum wells that undergo a type-I-type-II band-alignment transition, here for ordinary (In,Ga)As/GaAs multiple quantum wells and a single CdTe quantum well with a (Cd,Mn)Te semimagnetic barrier exhibiting a giant Zeeman effect. The oscillator strength becomes so strong in a field of 11.25 T that vacuum-field Rabi splitting is clearly seen in reflection spectra when the e1lh3 exciton transition couples to the two-dimensional optical mode in a microcavity