Characterization of Si Nanostructured Surfaces

Surface texturing of Si to enhance absorption particularly in the IR spectral region has been extensively investigated. Previous research chiefly examined approaches based on geometrical optics. These surface textures typically consist of pyramids with dimensions much larger than optical wavelengths. We have investigated a physical optics approach that relies on surface texture features comparable to, or smaller than, the optical wavelengths inside the semiconductor material. Light interaction at this are strongly dependent on incident polarization and surface profile. Nanoscale textures can be tuned for either narrow band, or broad band absorptive behavior. Lowest broadband reflection has been observed for triangular profiles with linewidths significantly less than 100 nm. Si nanostructures have been integrated into large ({approximately}42 cm{sup 2}) area solar cells, Internal quantum efficiency measurements in comparison with polished and conventionally textured cells show lower efficiency in the UV-visible (350-680 mu), but significantly higher IR (700-1200 nm) efficiency

Strain reduction in selectively grown CdTe by MBE on nanopatterned silicon on insulator (SOI) substrates

Silicon-based substrates for the epitaxy of HgCdTe are an attractive low-cost choice for monolithic integration of infrared detectors with mature Si technology and high yield. However, progress in heteroepitaxy of CdTe/Si (for subsequent growth of HgCdTe) is limited by the high lattice and thermal mismatch, which creates strain at the heterointerface that results in a high density of dislocations. Previously we have reported on theoretical modeling of strain partitioning between CdTe and Si on nanopatterned silicon on insulator (SOI) substrates. In this paper, we present an experimental study of CdTe epitaxy on nanopatterned (SOI). SOI (100) substrates were patterned with interferometric lithography and reactive ion etching to form a two-dimensional array of silicon pillars with similar to 250 nm diameter and 1 mu m pitch. MBE was used to grow CdTe selectively on the silicon nanopillars. Selective growth of CdTe was confirmed by scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). Coalescence of CdTe on the silicon nanoislands has been observed from the SEM characterization. Selective growth was achieved with a two-step growth process involving desorption of the nucleation layer followed by regrowth of CdTe at a rate of 0.2 angstrom s(-1). Strain measurements by Raman spectroscopy show a comparable Raman shift (2.7 +/- 2 cm(-1) from the bulk value of 170 cm(-1)) in CdTe grown on nanopatterned SOI and planar silicon (Raman shift of 4.4 +/- 2 cm(-1)), indicating similar strain on the nanopatterned substrates