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33 research outputs found

AlGaN/GaN HEMTs grown on SiC substrates

Author: Binari
Binari
Binari
Burm
G. Kelner
J.M. Redwing
Khan
Khan
Özgür
Redwing
S.C. Binari
W. Kruppa
Weitzel
Wu
Zolper
Publication venue: 'Institution of Engineering and Technology (IET)'
Publication date: 01/01/1997
Field of study

Effect of deep traps on sheet charge in AlGaN/GaN high electron mobility transistors

Author: A.E. Wickenden
Binari
Binari
D.D. Koleske
Hirsch
K. Ikossi
Klein
Klein
Klein
Klein
P.B. Klein
R.L. Henry
S.C. Binari
Theis
Wickenden
Publication venue: 'Institution of Engineering and Technology (IET)'
Publication date: 01/01/2001
Field of study

Effect of dry etching on surface properties of III-nitrides

Author: C. B. Vartuli
C. R. Abernahty
C.R. Abernathy
F. Ren
F. Ren
G.F. McLane
H. Morkoç
I. Adesida
J. D. Mackenzie
J. R. Lothian
M.A. Khan
M.A. Khan
M.A. Khan
M.E. Lin
R. F. Karlicek
R. G. Wilson
R.J. Shul
S. J. Pearton
S. Strite
S.C. Binari
S.C. Binari
S.J. Pearton
W. Kruppa
Publication venue: 'Springer Science and Business Media LLC'
Publication date
Field of study

Simulation of slow current transients and current compression in AlGaAs/GaAs HFETs

Author: G. Verzellesi
H. Ikarashi
K. Horio
K. Horio
K. Horio
K. Kitamura
K. Kunihiro
N. Kurosawa
R.E. Leoni
S.C. Binari
S.H. Lo
U.K. Mishra
Y. Kazami
Publication venue: 'Springer Science and Business Media LLC'
Publication date
Field of study

Simulation of slow current transients and current collapse in GaN FETs

Author: A. Kondymov
G. Koley
G. Meneghesso
H. Nakano
H. Takayanagi
K. Horio
K. Yonemoto
M. Farahnamd
S.C. Binari
T.T. Mnatsakanov
U.K. Mishra
W. Kruppa
Y. Kazami
Publication venue: 'Springer Science and Business Media LLC'
Publication date
Field of study

Physically based model for trapping and self-heating effects in 4H-SiC MESFETs

Author: A.S. Royet
G. Meneghesso
H. Lu
Hongliang Lu
K.J. Choi
N. Achtziger
N. Sghaier
Quanjun Cao
R.C. Clarke
S. Kagamihara
S.C. Binari
Shaojin Zheng
Yimen Zhang
Yong Che
Yuming Zhang
Publication venue: 'Springer Science and Business Media LLC'
Publication date
Field of study

P- and N-type doping of GaN and AlGaN epitaxial layers grown by metalorganic chemical vapor deposition

Author: A.L. Holmes
C. J. Eiting
F.A. Ponce
I. Akasaki
J.C. Carrano
J.M. Redwing
N. Koide
P. A. Grudowski
P.A. Grudowski
P.A. Grudowski
R. D. Dupuis
S. Nakamura
S. Nakamura
S. Nakamura
S. Yoshida
S.C. Binari
T. Tanaka
X. Zhang
Publication venue: 'Springer Science and Business Media LLC'
Publication date
Field of study

Effect of high-temperature processing on the creation of boron-related deep levels in 4H-SiC

Author: H. Bracht
Hrishikesh Das
J. L. Wyatt
M. Gong
M. Laube
M.S. Janson
M.S. Mazzola
Michael S. Mazzola
S. Ortolland
S.C. Binari
S.G. Sridhara
Swapna G. Sunkari
T. Anderson
T. Troffer
T.A. Anderson
Y. Koshka
Y. Koshka
Yaroslav Koshka
Publication venue: 'Springer Science and Business Media LLC'
Publication date
Field of study

Ion implantation doping of OMCVD grown GaN

Author: A. E. Wickenden
A. Edwards
B. Molnar
B. Molnar
C. J. Sun
C. Yuan
C.W. Farley
H.G. Bohn
H.H. Tan
I. Akasaki
J.C . Zolper
J.C. Zolper
J.C. Zolper
J.C. Zolper
J.G. Kim
J.P. DeSouza
J.S. Chan
L.B. Rowland
M. Furtada
M. Rubin
M.A. Sànchez-Garcia
M.E. Lin
M.V. Rao
Mulpuri V. Rao
P. H. Chi
R.G. Wilson
R.G. Wilson
R.K. Nadella
S. Nakamura
S. Nakamura
S.C. Binari
S.C. Binari
S.J. Pearton
S.J. Pearton
S.J. Pearton
S.M. Gulwadi
S.N. Mohammed
W. Gotz
W. Holland
Y. Ohba
Publication venue: 'Springer Science and Business Media LLC'
Publication date
Field of study

Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design

Author: A. Chakraborty
A. Chini
A. Jimenez
B.M. Green
D. Buttari
D. Buttari
L. Shen
L. Shen
M.B. Das
P. Smorchkova
R. Coffie
R. Coffie
R. Vetury
S. Heikman
S. Heikman
S. Keller
S. P. Denbaars
S.C. Binari
U. K. Mishra
U.K. Mishra
Publication venue: 'Springer Science and Business Media LLC'
Publication date
Field of study

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