Shubnikov-de Haas oscillations on molecular-beam-epitaxy-grown Hg 1-xCdxTe alloy doped with indium

Shubnikov-de Haas oscillations on the transverse resistivity ρxx and longitudinal resistivity ρzz of as-grown indium-doped alloys of Hg1-xCdxTe (0.24<x<0.34) grown by molecular-beam epitaxy on (111)B and (100) growth directions are observed in the temperature range from 1.2 to 25 K and in fields up to 12 T. The n-type density from the periodicity, the effective mass m* from the temperature dependence of the amplitude, and the Dingle temperature T D are determined from ρxx and ρzz oscillations. The oscillations establish the high Hall density which is found at low fields. The TD in ρxx is found to be higher in comparison to TD in ρzz. However, this difference decreases as the Hall density increases. The TD discrepancy is probably due to greater inhomogeneity in the plane of the layer. The T D is higher than the temperature calculated from the weak-field Hall mobility. The density and effective mass are used to calculate the energy band gap, Fermi energy, and the band-edge effective mass. The calculated energy band gaps are in good agreement with the reported results