40,417 research outputs found

    Variability of structural and electronic properties of bulk and monolayer Si2Te3

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    Since the emergence of monolayer graphene as a promising two-dimensional material, many other monolayer and few-layer materials have been investigated extensively. An experimental study of few-layer Si2Te3 was recently reported, showing that the material has diverse properties for potential applications in Si-based devices ranging from fully integrated thermoelectrics to optoelectronics to chemical sensors. This material has a unique layered structure: it has a hexagonal closed-packed Te sublattice, with Si dimers occupying octahedral intercalation sites. Here we report a theoretical study of this material in both bulk and monolayer form, unveiling a fascinating array of diverse properties arising from reorientations of the silicon dimers between planes of Te atoms. The lattice constant varies up to 5% and the band gap varies up to 40% depending on dimer orientations. The monolayer band gap is 0.4 eV larger than the bulk-phase value for the lowest-energy configuration of Si dimers. These properties are, in principle, controllable by temperature and strain, making Si2T3 a promising candidate material for nanoscale mechanical, optical, and memristive devices.Comment: 9 pages, 4 figure

    Underlying Fermi surface of Sr14βˆ’x_{14-x}Cax_xCu24_{24}O41_{41} in two-dimensional momentum space observed by angle-resolved photoemission spectroscopy

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    We have performed an angle-resolved photoemission study of the two-leg ladder system Sr14βˆ’x_{14-x}Cax_xCu24_{24}O41_{41} with xx= 0 and 11. "Underlying Fermi surfaces" determined from low energy spectral weight mapping indicates the quasi-one dimensional nature of the electronic structure. Energy gap caused by the charge density wave has been observed for xx=0 and the gap tends to close with Ca substitution. The absence of a quasi-particle peak even in xx=11 is in contrast to the two-dimensional high-TcT_c cuprates, implying strong carrier localization related to the hole crystalization.Comment: 5 pages, 3 figure
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