Real-Time Data Processing in the Muon System of the D0 Detector

This paper presents a real-time application of the 16-bit fixed point Digital Signal Processors (DSPs), in the Muon System of the D0 detector located at the Fermilab Tevatron, presently the world's highest-energy hadron collider. As part of the Upgrade for a run beginning in the year 2000, the system is required to process data at an input event rate of 10 KHz without incurring significant deadtime in readout. The ADSP21csp01 processor has high I/O bandwidth, single cycle instruction execution and fast task switching support to provide efficient multisignal processing. The processor's internal memory consists of 4K words of Program Memory and 4K words of Data Memory. In addition there is an external memory of 32K words for general event buffering and 16K words of Dual Port Memory for input data queuing. This DSP fulfills the requirement of the Muon subdetector systems for data readout. All error handling, buffering, formatting and transferring of the data to the various trigger levels of the data acquisition system is done in software. The algorithms developed for the system complete these tasks in about 20 microseconds per event.Comment: 4 pages, Presented and published at the 11th IEEE NPSS Real Time Conference, held at Santa Fe, New Mexico, USA, from June 14-18, 199

A 3-D Track-Finding Processor for the CMS Level-1 Muon Trigger

We report on the design and test results of a prototype processor for the CMS Level-1 trigger that performs 3-D track reconstruction and measurement from data recorded by the cathode strip chambers of the endcap muon system. The tracking algorithms are written in C++ using a class library we developed that facilitates automatic conversion to Verilog. The code is synthesized into firmware for field-programmable gate-arrays from the Xilinx Virtex-II series. A second-generation prototype has been developed and is currently under test. It performs regional track-finding in a 60 degree azimuthal sector and accepts 3 GB/s of input data synchronously with the 40 MHz beam crossing frequency. The latency of the track-finding algorithms is expected to be 250 ns, including geometrical alignment correction of incoming track segments and a final momentum assignment based on the muon trajectory in the non-uniform magnetic field in the CMS endcaps.Comment: 7 pages, 5 figures, proceedings for the conference on Computing in High Energy and Nuclear Physics, March 24-28 2003, La Jolla, Californi

Peculiarities and evolution of Raman spectra of multilayer Ge/Si(001) heterostructures containing arrays of low-temperature MBE-grown Ge quantum dots of different size and number density: Experimental studies and numerical simulations

Ge/Si(001) multilayer heterostructures containing arrays of low-temperature self-assembled Ge quantum dots and very thin Si$_x$Ge$_{1-x}$ layers of varying composition and complex geometry have been studied using Raman spectroscopy and scanning tunneling microscopy. The dependence of Raman spectra on the effective thickness of deposited Ge layers has been investigated in detail in the range from 4 to 18 \r{A}. The position and shape of both Ge and SiGe vibrational modes are of great interest since they are closely related to the strain and composition of the material that plays a role of active component in perspective optoelectronic devices based on such structures. In this work, we present an explanation for some peculiar features of Raman spectra, which makes it possible to control the quality of the grown heterostructures more effectively. A dramatic increase of intensity of both the Ge$-$Ge and Si$-$Ge bands for the structure containing Ge layers of 10 \r{A} and anomalous shift and broadening of the Si$-$Ge band for structures comprising Ge layers of 8 and 9 \r{A} thick were observed. In our model, the anomalous behavior of the Raman spectra with the change of thickness of deposited Ge is connected with the flatness of Ge layers as well as transitional SiGe domains formed via the stress-induced diffusion from {105} facets of quantum dots. The conclusions are supported by the STM studies and the numerical calculations.Comment: 17 pages, 11 figure

Fast electrochemical membrane actuator:Design, fabrication and preliminary testing

An actuator based on water electrolysis with a fast change of voltage polarity is presented. It demonstrates a new actuation principle allowing significant increase the operation frequency of the device due to fast termination of the produced gas. The actuator consists of a working chamber with metallic electrodes and supplying channels filled with an electrolyte. The chamber is formed in a layer of SU-8 and covered by a flexible polydimethylsiloxane membrane, which deforms as the pressure in the chamber increases. Design, fabrication procedure, and first tests of the actuator are described