1,745 research outputs found

    On (Sub)stochastic and Transient Weightings of Infinite Strong Digraphs

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    In the present paper, for a given (possibly, infinite) strongly connected digraph D,\cal{D}, we consider the class S<(D)\cal{S}_{<}({\cal D}) of all truthly substochastic weightings of D{\cal D} (here, the word "truthly" means that there exists a vertex whose out-weight is strictly less than 11). For a finite subdigraph F\cal{F} of D\cal{D} weighted by S∈S<(D),S\in {\cal S}_{<}({\cal D}), let ℓmax(F)\ell_{max}(\cal{F}) be the length of its longest directed cycle and λS(F)\lambda_{S}(\cal{F}) be the Perron root (spectral radius) of its weighted adjacency matrix. We prove that the infimum of ℓmax(F)(1−λS(F))\ell_{max}(\cal{F})\bigl(1-\lambda_{S}(\cal{F})\bigr) taken over all F\cal{F} is positive for every S∈S<(D)S\in \cal{S}_{<}({\cal D}) if and only if D\cal{D} admits a finite cycle transversal. The result obtained provides general theorems on the set T(D){\cal T}({\cal D}) of transient weightings of D.{\cal D}. In particular, we present a theorem of alternatives for finite approximations to elements of T(D){\cal T}({\cal D}) and simply reprove V. Cyr's criterion for T(D){\cal T}({\cal D}) to be empty

    Metallic and insulating behaviour of the two-dimensional electron gas on a vicinal surface of Si MOSFETs

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    The resistance R of the 2DEG on the vicinal Si surface shows an unusual behaviour, which is very different from that in the (100) Si MOSFET where an unconventional metal to insulator transition has been reported. The crossover from the insulator with dR/dT0 occurs at a low resistance of R_{\Box}^c \sim 0.04h/e^2. At the low-temperature transition, which we attribute to the existence of a narrow impurity band at the interface, a distinct hysteresis in the resistance is detected. At higher temperatures, another change in the sign of dR/dT is seen and related to the crossover from the degenerate to non-degenerate 2DEG.Comment: 4 pages, 4 figure
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