8 research outputs found
Effect of a change in the intermediate layer accompanying deposition of metal on the electrophysical properties of a metal-semiconductor contact
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Dependence of the photosensitivity of solar cells with metal-tunnel dielectric-semiconductor structure on the interfacial boundary properties
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Investigation of avalanche photocurrent at the edge of fundamental absorption band in Schottky diodes
No full textThe Au/SiOx/a-Si:H structures with very thin anodic oxide layers
No full textCreation of a high-quality dielectric layer during the formation of the MIS struc- tures on a-Si:H poses some problems. The thermic oxide, usually used in the MOSFET technology on c-Si, is inconvenient for a-Si:H because of degradation of the a-Si:tt films owing to effusion of hydrogen deal with some successful employment of the anodic oxidation for the preparation of MIS position-sensitive detectors and for the passivation of large-area solar cells. The present paper describes the influence of the thickness of dielectric layer prepared by the anodic oxidation on t h e I - V characteristics and optical prope r t i e s of MIS structures, of Au-SiO~-a-Si:H type
