Crystal Growth and Characterization of Bulk Sb2Te3Topological Insulator

The Sb2Te3 crystals are grown using the conventional self flux method via solid state reaction route, by melting constituent elements (Sb and Te) at high temperature (850 C), followed by slow cooling (2 C per hour).The weak anti localization (WAL) related low field (2 Tesla) magneto-conductance at low temperatures (2.5 K and 20 K) has been analysed and discussed using the Hikami- Larkin - Nagaoka (HLN) model. Summarily, the short letter reports an easy and versatile method for crystal growth of bulk Sb2Te3 topological insulator (TI) and its brief physical property characterization.Comment: 18 Pages Text + Figs: Accepted Mat. Res. Exp. (May 2018

High Field Magneto-Conductivity Analysis of Bi2Se3 Single Crystal

We report the high field (up to 14Tesla) magneto-conductivity analysis of Bi2Se3 topological insulator grown via the self flux method. The detailed experimental investigations including crystal growth as well as the electrical, thermal and spectroscopic characterizations of the resultant Bi2Se3 single crystal are already reported by some of us. The current letter deals with high field magneto-conductivity analysis in terms of Hikami Larkin Nagaoka (HLN) model, which revealed that the electronic conduction is dominated by both surface states driven weak anti localization (WAL), as well the bulk WL (weak localization) states. Further, by applying the HLN equation we have extracted the fitting parameters i.e., phase coherence length and the pre-factor. The HLN equation exhibited values of [pre factor close to -1.0, indicating both WAL and WL contributions. On the other hand, the extracted phase coherence length is seen to decrease from 11.125 nm to 5.576 nm as the temperature is increased from 5K to 200K respectively. Summarily, the short letter discusses primarily the temperature dependent magneto-conductivity analysis of pristine Bi2Se3 single crystal by the HLN model.Comment: Letter to Editor MS: 10 pages including 3 Fig