82 research outputs found
London's limit for the lattice superconductor
A stability problem for the current state of the strong coupling
superconductor has been considered within the lattice Ginzburg-Landau model.
The critical current problem for a thin superconductor film is solved within
the London limit taking into account the crystal lattice symmetry. The current
dependence on the order parameter modulus is computed for the superconductor
film for various coupling parameter magnitudes. The field penetration problem
is shown to be described in this case by the one-dimensional sine-Gordon
equation. The field distribution around the vortex is described at the same
time by the two-dimensional elliptic sine-Gordon equation.Comment: 7 pages, 3 figures, Revtex4, mostly technical correction; extended
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Two mini-band model for self-sustained oscillations of the current through resonant tunneling semiconductor superlattices
A two miniband model for electron transport in semiconductor superlattices
that includes scattering and interminiband tunnelling is proposed. The model is
formulated in terms of Wigner functions in a basis spanned by Pauli matrices,
includes electron-electron scattering in the Hartree approximation and modified
Bhatnagar-Gross-Krook collision tems. For strong applied fields, balance
equations for the electric field and the miniband populations are derived using
a Chapman-Enskog perturbation technique. These equations are then solved
numerically for a dc voltage biased superlattice. Results include
self-sustained current oscillations due to repeated nucleation of electric
field pulses at the injecting contact region and their motion towards the
collector. Numerical reconstruction of the Wigner functions shows that the
miniband with higher energy is empty during most of the oscillation period: it
becomes populated only when the local electric field (corresponding to the
passing pulse) is sufficiently large to trigger resonant tunneling.Comment: 26 pages, 3 figures, to appear in Phys. Rev.
Unraveling of free carrier absorption for terahertz radiation in heterostructures
The relation between free carrier absorption and intersubband transitions in
semiconductor heterostructures is resolved by comparing a sequence of
structures. Our numerical and analytical results show how free carrier
absorption evolves from the intersubband transitions in the limit of an
infinite number of wells with vanishing barrier width. It is explicitly shown
that the integral of the absorption over frequency matches the value obtained
by the f-sum rule. This shows that a proper treatment of intersubband
transitions is fully sufficient to simulate the entire electronic absorption in
heterostructure THz devices.Comment: 6 pages, accepted by Physical Review
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