Renormalization group approach to spinor Bose-Fermi mixtures in a shallow optical lattice

We study a mixture of ultracold spin-half fermionic and spin-one bosonic atoms in a shallow optical lattice where the bosons are coupled to the fermions via both density-density and spin-spin interactions. We consider the parameter regime where the bosons are in a superfluid ground state, integrate them out, and obtain an effective action for the fermions. We carry out a renormalization group analysis of this effective fermionic action at low temperatures, show that the presence of the spinor bosons may lead to a separation of Fermi surfaces of the spin-up and spin-down fermions, and investigate the parameter range where this phenomenon occurs. We also calculate the susceptibilities corresponding to the possible superfluid instabilities of the fermions and obtain their possible broken-symmetry ground states at low temperatures and weak interactions.Comment: 8 pages, 8 figs v

Spin injection into a metal from a topological insulator

We study a junction of a topological insulator with a thin two-dimensional (2D) non-magnetic or partially polarized ferromagnetic metallic film deposited on a 3D insulator. We show that such a junction leads to a finite spin current injection into the film whose magnitude can be controlled by tuning a voltage $V$ applied across the junction. For ferromagnetic films, the direction of the component of the spin current along the film magnetization can also be tuned by tuning the barrier potential $V_0$ at the junction. We point out the role of the chiral spin-momentum locking of the Dirac electrons behind this phenomenon and suggest experiments to test our theory.Comment: Revised version with supplemental material

Fermionic Chern-Simons Theory of SU(4) Fractional Quantum Hall Effect

We develop a Fermionic Chern-Simons (CS) theory for the fractional quantum Hall effect in monolayer graphene with SU(4) symmetry, arising from the spin and the valley degrees of freedom, which involves four distinct CS gauge fields. We choose the corresponding elements of the CS coupling matrix such that an even number of spin and valley quantum number dependent flux quanta is attached to all electrons and that any electron with a given spin and valley quantum number sees an integer number of flux attached to other electrons with different (spin and valley) quantum numbers. Using this CS matrix, we obtain a list of possible fractional quantum Hall states that might occur in graphene and propose wavefunctions for those states. Our analysis also applies to fractional quantum Hall states of both bilayer quantum Hall systems without spin polarization and bilayer spin polarized graphene.Comment: v1; 1 Fig, 2 Tables, 7+ page

Superfluid-Insulator transitions of bosons on Kagome lattice at non-integer fillings

We study the superfluid-insulator transitions of bosons on the Kagome lattice at incommensurate filling factors f=1/2 and 2/3 using a duality analysis. We find that at f=1/2 the bosons will always be in a superfluid phase and demonstrate that the T_3 symmetry of the dual (dice) lattice, which results in dynamic localization of vortices due to the Aharanov-Bohm caging effect, is at the heart of this phenomenon. In contrast, for f=2/3, we find that the bosons exhibit a quantum phase transition between superfluid and translational symmetry broken Mott insulating phases. We discuss the possible broken symmetries of the Mott phase and elaborate the theory of such a transition. Finally we map the boson system to a XXZ spin model in a magnetic field and discuss the properties of this spin model using the obtained results.Comment: 10 pages, 8 figures, a few typos correcte

Magnetotransport of Dirac Fermions on the surface of a topological insulator

We study the properties of Dirac fermions on the surface of a topological insulator in the presence of crossed electric and magnetic fields. We provide an exact solution to this problem and demonstrate that, in contrast to their counterparts in graphene, these Dirac fermions allow relative tuning of the orbital and Zeeman effects of an applied magnetic field by a crossed electric field along the surface. We also elaborate and extend our earlier results on normal metal-magnetic film-normal metal (NMN) and normal metal-barrier-magnetic film (NBM) junctions of topological insulators [Phys. Rev. Lett. {\bf 104}, 046403 (2010)]. For NMN junctions, we show that for Dirac fermions with Fermi velocity $v_F$, the transport can be controlled using the exchange field ${\mathcal J}$ of a ferromagnetic film over a region of width $d$. The conductance of such a junction changes from oscillatory to a monotonically decreasing function of $d$ beyond a critical ${\mathcal J}$ which leads to the possible realization of magnetic switches using these junctions. For NBM junctions with a potential barrier of width $d$ and potential $V_0$, we find that beyond a critical ${\mathcal J}$, the criteria of conductance maxima changes from $\chi= e V_0 d/\hbar v_F = n \pi$ to $\chi= (n+1/2)\pi$ for integer $n$. Finally, we compute the subgap tunneling conductance of a normal metal-magnetic film-superconductor (NMS) junctions on the surface of a topological insulator and show that the position of the peaks of the zero-bias tunneling conductance can be tuned using the magnetization of the ferromagnetic film. We point out that these phenomena have no analogs in either conventional two-dimensional materials or Dirac electrons in graphene and suggest experiments to test our theory.Comment: 11 pages, 12 figures; v

Tuning the conductance of Dirac fermions on the surface of a topological insulator

We study the transport properties of the Dirac fermions with Fermi velocity $v_F$ on the surface of a topological insulator across a ferromagnetic strip providing an exchange field ${\mathcal J}$ over a region of width $d$. We show that the conductance of such a junction changes from oscillatory to a monotonically decreasing function of $d$ beyond a critical ${\mathcal J}$. This leads to the possible realization of a magnetic switch using these junctions. We also study the conductance of these Dirac fermions across a potential barrier of width $d$ and potential $V_0$ in the presence of such a ferromagnetic strip and show that beyond a critical ${\mathcal J}$, the criteria of conductance maxima changes from $\chi= e V_0 d/\hbar v_F = n \pi$ to $\chi= (n+1/2)\pi$ for integer $n$. We point out that these novel phenomena have no analogs in graphene and suggest experiments which can probe them.Comment: v1 4 pages 5 fig