Unveiling the electronic structure of pseudo-tetragonal WO3_3 thin films

WO$_3$ is a binary 5d compound which has attracted remarkable attention due to the vast array of structural transitions that it undergoes in its bulk form. In the bulk, a wide range of electronic properties has been demonstrated, including metal-insulator transitions and superconductivity upon doping. In this context, the synthesis of WO$_3$ thin films holds considerable promise for stabilizing targeted electronic phase diagrams and embedding them in technological applications. However, to date, the electronic structure of WO$_3$ thin films is experimentally unexplored, and only characterized by numerical calculations. Underpinning such properties experimentally would be important to understand not only the collective behavior of electrons in this transition metal oxide, but also to explain and engineer both the observed optical responses to carriers' concentration and its prized catalytic activity. Here, by means of tensile strain, we stabilize WO$_3$ thin films into a stable phase, which we call pseudo-tetragonal, and we unveil its electronic structure by combining photoelectron spectroscopy and density functional theory calculations. This study constitutes the experimental demonstration of the electronic structure of WO$_3$ thin-films and allows us to pin down the first experimental benchmarks of the fermiology of this system

A dynamical (e,2e) investigation of the structurally related cyclic ethers tetrahydrofuran, tetrahydropyran, and 1,4-dioxane

Triple differential cross section measurements for the electron-impact ionization of the highest occupied molecular orbitals of tetrahydropyran and 1,4-dioxane are presented. For each molecule, experimental measurements were performed using the (e,2e) technique in asymmetric coplanar kinematics with an incident electron energy of 250 eV and an ejected electron energy of 20 eV. With the scattered electrons being detected at −5°, the angular distributions of the ejected electrons in the binary and recoil regions were observed. These measurements are compared with calculations performed within the molecular 3-body distorted wave model. Here, reasonable agreement was observed between the theoretical model and the experimental measurements. These measurements are compared with results from a recent study on tetrahydrofuran in order to evaluate the influence of structure on the dynamics of the ionization process across this series of cyclic ethers

Inverting the model of genomics data sharing with the NHGRI Genomic Data Science Analysis, Visualization, and Informatics Lab-space

The NHGRI Genomic Data Science Analysis, Visualization, and Informatics Lab-space (AnVIL; https://anvilproject.org) was developed to address a widespread community need for a unified computing environment for genomics data storage, management, and analysis. In this perspective, we present AnVIL, describe its ecosystem and interoperability with other platforms, and highlight how this platform and associated initiatives contribute to improved genomic data sharing efforts. The AnVIL is a federated cloud platform designed to manage and store genomics and related data, enable population-scale analysis, and facilitate collaboration through the sharing of data, code, and analysis results. By inverting the traditional model of data sharing, the AnVIL eliminates the need for data movement while also adding security measures for active threat detection and monitoring and provides scalable, shared computing resources for any researcher. We describe the core data management and analysis components of the AnVIL, which currently consists of Terra, Gen3, Galaxy, RStudio/Bioconductor, Dockstore, and Jupyter, and describe several flagship genomics datasets available within the AnVIL. We continue to extend and innovate the AnVIL ecosystem by implementing new capabilities, including mechanisms for interoperability and responsible data sharing, while streamlining access management. The AnVIL opens many new opportunities for analysis, collaboration, and data sharing that are needed to drive research and to make discoveries through the joint analysis of hundreds of thousands to millions of genomes along with associated clinical and molecular data types

Topological regime study in Bi2Se3 thin films through electric transport and low-frequency electric noise

New states of quantum matter, not directly related to conventional insulators and semiconductors, are represented by topological insulators. Due to a strong contribution of the surface to transport, these compounds have attracted an increasing interest, especially in the nanoscience field. In order to better investigate the effect of intrinsic fluctuations on the surface conduction, a detailed characterization of the low-frequency noise has been made on Bi2Se3 thin films. The experiments have been performed by varying the samples thickness and geometry, in a temperature range from 300 down to 8 K, and as a function of dc bias current and gate voltage

Investigation of topological regime in Bi2Se3 thin films through low-frequency electric noise

Topological insulators are considered new states of quantum matter that cannot be systematically related to conventional insulators and semiconductors. Among them, Bi2Se3 has attracted an increasing interest due to a simple surface band structure and due to a strong contribution of the surface to transport. While the dc electric transport properties have been extensively studied, intrinsic fluctuations and their effect on the surface conduction have received less attention. In order to better investigate these aspects, a detailed characterization of the low-frequency noise, also known as noise spectroscopy, has been made in Bi2Se3 thin films. The experimental results have been obtained for different samples thickness and geometry, in a temperature range from 300 down to 8 K, and as a function of dc bias current and gate voltage. While the observed spectral noise shows a typical thermal and shot noise part, an unusual reduction of the 1/f noise component is found, especially in the low-temperature region. A correlation of this behavior with structural and dc electric transport investigations suggests that it could be an indication of the occurrence of the topological regime. Flicker noise measurements, therefore, could be considered as a valid alternative technique to standard topological surface state spectroscopy

Chemical, structural and electronic properties of ultrathin V2O3 films on Al2O3 substrate: Implications in Mott-like transitions

V2O3 presents a complex interrelationship between the metal-insulator transition and the structural rhombohedral-monoclinic one in temperature, as a function of sample thickness. Whilst in bulk V2O3 the two transitions coincide on the temperature scale, at 15 nm thickness a fully independent Mott-like transition occurs at lower temperature, with no corresponding structural changes perhaps related to epitaxial strain. It is therefore of relevance to investigate the thin and ultrathin film growth to pinpoint the chemical, electronic and structural phase phenomenology and the role of the interface with the substrate. Here we present results on the thickness dependent properties of V2O3 from 1 nm up to 40 nm thick as grown on c-plane Al2O3 substrates by exploiting variable sampling depth probes. The surface morphology of stoichiometric ultra-thin V2O3 layers evolves from islands-like to continuous flat film with thickness, with implications on the overall properties

Dual pulsed laser deposition system for the growth of complex materials and heterostructures

Here, we present an integrated ultra-high-vacuum (UHV) apparatus for the growth of complex materials and heterostructures. The specific growth technique is the Pulsed Laser Deposition (PLD) by means of a dual-laser source based on an excimer KrF ultraviolet and solid-state Nd:YAG infra-red lasers. By taking advantage of the two laser sources—both lasers can be independently used within the deposition chambers—a large number of different materials—ranging from oxides to metals, to selenides, and others—can be successfully grown in the form of thin films and heterostructures. All of the samples can be in situ transferred between the deposition chambers and the analysis chambers by using vessels and holders’ manipulators. The apparatus also offers the possibility to transfer samples to remote instrumentation under UHV conditions by means of commercially available UHV-suitcases. The dual-PLD operates for in-house research as well as user facility in combination with the Advanced Photo-electric Effect beamline at the Elettra synchrotron radiation facility in Trieste and allows synchrotron-based photo-emission as well as x-ray absorption experiments on pristine films and heterostructures