37,061 research outputs found
Transport properties of diluted magnetic semiconductors: Dynamical mean field theory and Boltzmann theory
The transport properties of diluted magnetic semiconductors (DMS) are
calculated using dynamical mean field theory (DMFT) and Boltzmann transport
theory. Within DMFT we study the density of states and the dc-resistivity,
which are strongly parameter dependent such as temperature, doping, density of
the carriers, and the strength of the carrier-local impurity spin exchange
coupling. Characteristic qualitative features are found distinguishing weak,
intermediate, and strong carrier-spin coupling and allowing quantitative
determination of important parameters defining the underlying ferromagnetic
mechanism. We find that spin-disorder scattering, formation of bound state, and
the population of the minority spin band are all operational in DMFT in
different parameter range. We also develop a complementary Boltzmann transport
theory for scattering by screened ionized impurities. The difference in the
screening properties between paramagnetic () and ferromagnetic ()
states gives rise to the temperature dependence (increase or decrease) of
resistivity, depending on the carrier density, as the system goes from the
paramagnetic phase to the ferromagnetic phase. The metallic behavior below
for optimally doped DMS samples can be explained in the Boltzmann theory
by temperature dependent screening and thermal change of carrier spin
polarization.Comment: 15 pages, 15 figure
Schwoebel barriers on Si(111) steps and kinks
Motivated by our previous work using the Stillinger-Weber potential, which
shows that the [] step on 11 reconstructed Si(111) has
a Schwoebel barrier of 0.610.07 eV, we calculate here the same barrier
corresponding to two types of kinks on this step - one with rebonding between
upper and lower terrace atoms (type B) and the other without (type A). From the
binding energy of an adatom, without additional relaxation of other atoms, we
find that the Schwoebel barrier must be less than 0.39 eV (0.62 eV) for the
kink of type A (type B). From the true adatom binding energy we determine the
Schwoebel barrier to be 0.150.07eV (0.500.07 eV). The reduction of
the Schwoebel barrier due to the presence of rebonding along the step edge or
kink site is argued to be a robust feature. However, as the true binding energy
plots show discontinuities due to significant movement of atoms at the kink
site, we speculate on the possibility of multi-atom processes having smaller
Schwoebel barriers.Comment: Manuscript in revtex twocolumn format (7pgs - which includes 14
postscript files). Submitted to the The Journal of Vacuum Science and
Technology (Proceedings of the Physics and Chemistry of Semi- conductor
Interfaces - 23 (1996)
Microcanonical Lattice Gas Model for Nuclear Disassembly
Microcanonical calculations are no more difficult to implement than canonical
calculations in the Lattice Gas Model. We report calculations for a few
observables where we compare microcanonical model results with canonical model
results.Comment: 7 pages, Revtex, 3 postscript figure
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