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On the Kinetic Roughening in Polymer Film Growth by Vapor Deposition
This is a Comment on a recent publication: Y.-P. Zhao et al., Phys. Rev.
Lett. 85, 3229 (2000). In the Letter, the authors report on an experimental
investigation of polymeric (p-xylene) thin film growth and propose a new
universality class not previously known. Here, we point out that the critical
exponents reported in the Letter are consistent with the critical exponents of
Das Sarma-Tamborenea growth model.Comment: 2 pages, 1 figure include
Transport properties of diluted magnetic semiconductors: Dynamical mean field theory and Boltzmann theory
The transport properties of diluted magnetic semiconductors (DMS) are
calculated using dynamical mean field theory (DMFT) and Boltzmann transport
theory. Within DMFT we study the density of states and the dc-resistivity,
which are strongly parameter dependent such as temperature, doping, density of
the carriers, and the strength of the carrier-local impurity spin exchange
coupling. Characteristic qualitative features are found distinguishing weak,
intermediate, and strong carrier-spin coupling and allowing quantitative
determination of important parameters defining the underlying ferromagnetic
mechanism. We find that spin-disorder scattering, formation of bound state, and
the population of the minority spin band are all operational in DMFT in
different parameter range. We also develop a complementary Boltzmann transport
theory for scattering by screened ionized impurities. The difference in the
screening properties between paramagnetic () and ferromagnetic ()
states gives rise to the temperature dependence (increase or decrease) of
resistivity, depending on the carrier density, as the system goes from the
paramagnetic phase to the ferromagnetic phase. The metallic behavior below
for optimally doped DMS samples can be explained in the Boltzmann theory
by temperature dependent screening and thermal change of carrier spin
polarization.Comment: 15 pages, 15 figure
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