High-power 1.3 µm superluminescent diode

Superluminescent diodes with high output power (10 mW at 175 mA), wide spectral width (28 nm), low spectral modulation depth (<15%), wide frequency modulation bandwidth (570 MHz), and high single-mode fiber coupling efficiency (40%) are reported. The structure is based on a buried crescent laser structure with an antireflection coating and a "short-circuit" absorber to suppress lasing

AlGaAs lasers with micro-cleaved mirrors suitable for monolithic integration

A technique has been developed for cleaving the mirrors of AlGaAs lasers without cleaving the substrate. Micro-cleaving involves cleaving a suspended heterostructure cantilever by ultrasonic vibrations. Lasers with microcleaved mirrors have threshold currents and quantum efficiencies identical to those of similar devices with conventionally cleaved mirrors

Gallium Arsenide Monolithic Optoelectronic Circuits

The optical properties of GaAs make it a very useful material for the fabrication of optical emitters and detectors. GaAs also possesses electronic properties which allow the fabrication of high speed electronic devices which are superior to conventional silicon devices. Monolithic optoelectronic circuits are formed by the integration of optical and electronic devices on a single GaAs substrate. Integration of many devices is most easily accomplished on a semi-insulating (SI) sub-strate. Several laser structures have been fabricated on SI GaAs substrates. Some of these lasers have been integrated with Gunn diodes and with metal semiconductor field effect transistors (MESFETs). An integrated optical repeater has been demonstrated in which MESFETs are used for optical detection and electronic amplification, and a laser is used to regenerate the optical signal. Monolithic optoelectronic circuits have also been constructed on conducting substrates. A heterojunction bipolar transistor driver has been integrated with a laser on an n-type GaAs substrate

A monolithically integrated optical repeater

A monolithically integrated optical repeater has been fabricated on a single-crystal semi-insulating GaAs substrate. The repeater consists of an optical detector, an electronic amplifier, and a double heterostructure crowding effect laser. The repeater makes use of three metal semiconductor field effect transistors, one of which is used as the optical detector. With light from an external GaAlAs laser incident on the detector, an overall optical power gain of 10 dB from both laser facets was obtained

Monolithic integration of a GaAlAs buried-heterostructure laser and a bipolar phototransistor

A GaAlAs buried-heterostructure laser has been monolithically integrated with a bipolar phototransistor. The heterojunction transistor was formed by the regrowth of the burying layers of the laser. Typical threshold current values for the lasers were 30 mA. Common-emitter current gains for the phototransistor of 100–400 and light responsivity of 75 A/W (for wavelengths of 0.82 µm) at collector current levels of 15 mA were obtained

Be-implanted (GaAl)As stripe geometry lasers

GaAl)As double-heterostructure stripe geometry lasers have been fabricated using Be ion implantation. Pulsed threshold currents as low as 21 mA have been found. The light-vs-current characteristics were kink-free up to 10 mW output power and the measured differential quantum efficiency was 45%

Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InP

Monolithic integration of 1.3-µm groove lasers and metal-insulator-semiconductor field-effect transistors (MISFET) is achieved by a simple single liquid phase epitaxy (LPE) growth process. Laser thresholds as low as 14 mA for 300-µm cavity length are obtained. MIS depletion mode FET's with n channels on LPE grown InP layer show typical transconductance of 5–10 mmho. Laser modulation by the FET current is demonstrated at up to twice the threshold current