35 research outputs found
Scintillating double beta decay bolometers
We present the results obtained in the development of scintillating Double
Beta Decay bolometers. Several Mo and Cd based crystals were tested with the
bolometric technique. The scintillation light was measured through a second
independent bolometer. A 140 g CdWO_4 crystal was run in a 417 h live time
measurement. Thanks to the scintillation light, the alpha background is easily
discriminated resulting in zero counts above the 2615 keV gamma line of
Thallium 208. These results, combined with an extremely easy light detector
operation, represent the first tangible proof demonstrating the feasibility of
this kind of technique.Comment: 15 pages, 8 figure
Vertical-external-cavity surface-emitting lasers and quantum dot lasers
The use of cavity to manipulate photon emission of quantum dots (QDs) has
been opening unprecedented opportunities for realizing quantum functional
nanophotonic devices and also quantum information devices. In particular, in
the field of semiconductor lasers, QDs were introduced as a superior
alternative to quantum wells to suppress the temperature dependence of the
threshold current in vertical-external-cavity surface-emitting lasers
(VECSELs). In this work, a review of properties and development of
semiconductor VECSEL devices and QD laser devices is given. Based on the
features of VECSEL devices, the main emphasis is put on the recent development
of technological approach on semiconductor QD VECSELs. Then, from the viewpoint
of both single QD nanolaser and cavity quantum electrodynamics (QED), a
single-QD-cavity system resulting from the strong coupling of QD cavity is
presented. A difference of this review from the other existing works on
semiconductor VECSEL devices is that we will cover both the fundamental aspects
and technological approaches of QD VECSEL devices. And lastly, the presented
review here has provided a deep insight into useful guideline for the
development of QD VECSEL technology and future quantum functional nanophotonic
devices and monolithic photonic integrated circuits (MPhICs).Comment: 21 pages, 4 figures. arXiv admin note: text overlap with
arXiv:0904.369
Temperature-induced variation of the emission band intensities of an SrAl12O19:Pr phosphor
The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix
International audienceStructures with In(Ga)As quantum dots in the GaAs matrix obtained using molecular-beam epitaxy are investigated using photoluminescence (PL) measurements and transmission electron microscopy. The structures were subjected in situ to the procedure of the selective thermal elimination of defect regions. Based on the results of the analysis of luminescence properties, a method for evaluating the crystalline quality of structures using the measurements of PL intensity for the GaAs matrix at high temperatures (as high as 400 K) is suggested. Procedures for the elimination of defects are investigated, namely, the single-stage selective elimination of InAs defect islands at 600°C and a two-stage procedure. The latter procedure additionally includes selective overgrowth with a thin AlAs layer and high-temperature (650â700°C) heat treatment. The optimal conditions of the process, which permit the obtaining of structures with a relatively low defect density without a considerable decrease in the density of coherent quantum dots, are found