A 64-MHz 2.15-µW/MHz On-Chip Relaxation Oscillator with 130-ppm/°C Temperature Coefficient

This paper presents a 2.15 µW/MHz at the frequency of 64 MHz relaxation oscillator with a dynamic range of frequency from 47.5 MHz to 80 MHz. To reduce the power consumption and improve energy efficiency, this work employs only one comparator and one capacitor to generate the output clock in comparison with conventional relaxation oscillator structures. A total of 50% ± 5% of the duty cycle is obtained for the output clock by implementing an auxiliary comparator. The proposed relaxation oscillator uses the output voltages of an external low-dropout (LDO) voltage and bandgap reference (BGR) for the required supply and reference voltages, respectively. Two current sources are implemented to provide the required currents for trimming the output frequency and driving the comparators. Measurement results indicate that the relaxation oscillator achieves a temperature coefficient (TC) of 130 ppm/°C over a wide temperature range from −25 °C to 135 °C at the frequency of 64 MHz. The relaxation oscillator consumes 115 µA of current at the frequency of 64 MHz under a low-dropout (LDO) voltage of 1.2 V. The proposed relaxation oscillator is analyzed and fabricated in standard 90 nm complementary metal-oxide semiconductor (CMOS) process, and the die area is 130 µm × 90 µm

A 1.8–2.7 GHz Triple-Band Low Noise Amplifier with 31.5 dB Dynamic Range of Power Gain and Adaptive Power Consumption for LTE Application

This paper presents a multi-gain radio frequency (RF) front-end low noise amplifier (LNA) utilizing a multi-core based on the source degeneration topology. The LNA can cover a wide range of input and output frequency matching by using a receiver (RX) switch at the input and a capacitor bank at the output of the LNA. In the proposed architecture here, to avoid the saturation of RX chain, 12 gain steps including positive, 0 dB, and negative power gains are controlled by a mobile industry processor interface (MIPI). The multi-core architecture offers the ability to control the power consumption over different gain steps. In order to avoid the phase discontinuity, the negative gain steps are provided using an active amplification and T-type attenuation path that keeps the phase discontinuity below ±5 degrees between two adjacent power gain steps. Using the multi-core structure, the power consumption is optimized in different power gains. The structure is enhanced with the adaptive variable cores and reactance parameters to maintain different power consumption for different gain steps and remain the output matching in an acceptable operating range. Furthermore, auxiliary linearization circuitries are added to improve the input third intercept point (IIP3) performance of the LNA. The chip is fabricated in 65 nm complementary metal-oxide semiconductor (CMOS) silicon on insulator (SOI) process and the die area is 0.308 mm2. The proposed architecture achieves the IIP3 performance of −10.2 dBm and 8.6 dBm in the highest and lowest power gains, which are 20.5 dB and −11 dB, respectively. It offers the noise figure (NF) performance of 1.15 dB in the highest power gain while it reaches 14 dB when the power gain is −11 dB. The LNA consumes 16.8 mA and 1.33 mA current from a 1 V power supply that is provided by an on-chip low-dropout (LDO) when it operates at the highest and lowest gains, respectively

A Design of Analog Front-End with DBPSK Demodulator for Magnetic Field Wireless Network Sensors

This paper presents an on-chip fully integrated analog front-end (AFE) with a non-coherent digital binary phase-shift keying (DBPSK) demodulator suitable for short-range magnetic field wireless communication applications. The proposed non-coherent DBPSK demodulator is designed based on using comparators to digitize the received differential analog BPSK signal. The DBPSK demodulator does not need any phase-lock loop (PLL) to detect the data and recover the clock. Moreover, the proposed demodulator provides the detected data and the recovered clock simultaneously. Even though previous studies have offered the basic structure of the AFEs, this work tries to amplify and generate the required differential BPSK signal without missing data and clock throughout the AFE, while a low voltage level signal is received at the input of the AFE. A DC-offset cancellation (DCOC), a cascaded variable gain amplifier (VGA), and a single-to-differential (STOD) converter are employed to construct the implemented AFE. The simulation results indicate that the AFE provides a dynamic range of 0 dB to 40 dB power gain with 2 dB resolution. Measurement results show the minimum detectable voltage at the input of AFE is obtained at 20 mV peak-to-peak. The AFE and the proposed DBSPK demodulator are analyzed and fabricated in a 130 nm Bipolar-CMOS-DMOS (BCD) technology to recover the maximum data rate of 32 kbps where the carrier frequency is 128 kHz. The implemented DCOC, cascaded VGA, STOD, and the demodulator occupy 0.15 mm2, 0.063 mm2, 0.045 mm2, and 0.03 mm2 of area, respectively. The AFE and the demodulator consume 2.9 mA and 0.15 mA of current from an external 5 V power supply, respectively