Evaluation and comparison of satellite precipitation estimates with reference to a local area in the Mediterranean Sea

Precipitation is one of the major variables for many applications and disciplines related to water resources and the geophysical Earth system. Satellite retrieval systems, rain-gauge networks, and radar systems are complementary to each other in terms of their coverage and capability of monitoring precipitation. Satellite-rainfall estimate systems produce data with global coverage that can provide information in areas for which data from other sources are unavailable. Without referring to ground measurements, satellite-based estimates can be biased and, although some gauge-adjusted satellite-precipitation products have been already developed, an effective way of integrating multi-sources of precipitation information is still a challenge.In this study, a specific area, the Sicilia Island (Italy), has been selected for the evaluation of satellite-precipitation products based on rain-gauge data. This island is located in the Mediterranean Sea, with a particular climatology and morphology, which can be considered an interesting test site for satellite-precipitation products in the European mid-latitude area. Four satellite products (CMORPH, PERSIANN, PERSIANN-CCS, and TMPA-RT) and two GPCP-adjusted products (TMPA and PERSIANN Adjusted) have been selected. Evaluation and comparison of selected products is performed with reference to data provided by the rain-gauge network of the Island Sicilia and by using statistical and graphical tools. Particular attention is paid to bias issues shown both by only-satellite and adjusted products. In order to investigate the current and potential possibilities of improving estimates by means of adjustment procedures using GPCC ground precipitation, the data have been retrieved separately and compared directly with the reference rain-gauge network data set of the study area.Results show that bias is still considerable for all satellite products, then some considerations about larger area climatology, PMW-retrieval algorithms, and GPCC data are discussed to address this issue, along with the spatial and seasonal characterization of results. © 2013 Elsevier B.V

Ge quantum dot arrays grown by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface: nucleation, morphology and CMOS compatibility

Issues of morphology, nucleation and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (<600 deg C) and high (>600 deg. C) temperatures is studied by high resolution scanning tunneling microscopy. The atomic models of growth of both species of Ge huts---pyramids and wedges---are proposed. The growth cycle of Ge QD arrays at low temperatures is explored. A problem of lowering of the array formation temperature is discussed with the focus on CMOS compatibility of the entire process; a special attention is paid upon approaches to reduction of treatment temperature during the Si(001) surface pre-growth cleaning, which is at once a key and the highest-temperature phase of the Ge/Si(001) quantum dot dense array formation process. The temperature of the Si clean surface preparation, the final high-temperature step of which is, as a rule, carried out directly in the MBE chamber just before the structure deposition, determines the compatibility of formation process of Ge-QD-array based devices with the CMOS manufacturing cycle. Silicon surface hydrogenation at the final stage of its wet chemical etching during the preliminary cleaning is proposed as a possible way of efficient reduction of the Si wafer pre-growth annealing temperature.Comment: 30 pages, 11 figure

Exact factorization of the time-dependent electron-nuclear wavefunction

We present an exact decomposition of the complete wavefunction for a system of nuclei and electrons evolving in a time-dependent external potential. We derive formally exact equations for the nuclear and electronic wavefunctions that lead to rigorous definitions of a time-dependent potential energy surface (TDPES) and a time-dependent geometric phase. For the $H_2^+$ molecular ion exposed to a laser field, the TDPES proves to be a useful interpretive tool to identify different mechanisms of dissociation.Comment: 4 pages, 2 figure

The ‘common sense’ memory belief system and its implications

Memory experts, the police, and the public, completed a memory questionnaire containing a series of statements about autobiographical memory. The statements covered issues such as the nature of memory, determinants of accuracy, the relation of emotion and trauma to memory, and respondents indicated their agreement/disagreement with each of the statements. The police and public were found to share a ‘common sense’ memory belief system (CSMBS) in which memories were like videos/photographs, and accuracy was determined by the number of details recalled and also by their vividness. In direct contrast the scientific memory belief system, held by memory researchers, largely based on scientific evidence, was the opposite of the CSMBS and memories were judged to be fragmentary, number of details and their nature did not predict accuracy, and memories and their details could be in error and even false. The problematic nature of the CSBMS, which is pervasive in society, in raising the probability of flawed judgments of memory evidence is considered and, by way of illustration, applied to the (very high) attrition rate in complaints of rape

Highly efficient and reliable high power InGaN/GaN LEDs with 3D patterned step-like ITO and wavy sidewalls

Nitride-based high power LEDs with finger-like SiO2 current blocking layer (CBL), three-dimensional (3D) patterned step-like ITO double layers and wavy sidewalls were fabricated. The finger-like SiO2 CBL beneath finger-like p-electrode was designed to prevent current crowding effect, thereby facilitating uniform current spreading over the entire chip. In addition, 3D patterned step-like ITO double layers, including alternating 230 nm thick patterned upper step ITO layer and 100 nm thick lower step ITO layer, were formed by combining photolithography and aqua regia etchant. We showed that the top light extraction efficiency of high power LEDs can be significantly enhanced by taking 3D patterned step-like ITO. The light output power of high power LEDs with 3D patterned step-like ITO double layers is 13.9% higher than that of LEDs with smooth ITO layer. High-power LEDs with wavy sidewalls was fabricated by an optimized mask design in conjunction with dry etching process based on Cl2/BCl3 to improve light extraction efficiency at the horizontal direction. We demonstrated that light output power of high power LEDs with wavy sidewalls can be improved by 11% as compared to LEDs with flat sidewalls

Doping dependent evolution of magnetism and superconductivity in Eu1-xKxFe2As2 (x = 0-1) and temperature dependence of lower critical field Hc1

We have synthesized the polycrystalline samples of Eu1-xKxFe2As2 (x = 0-1) and carried out systematic characterization using x-ray diffraction, ac & dc magnetic susceptibility, and electrical resistivity measurements. We have seen a clear signature of the coexistence of superconducting transition (Tc = 5.5 K) with SDW ordering in our under doped sample viz. x = 0.15. The spin density wave transition observed in EuFe2As2 get completely suppressed at x = 0.3 and superconductivity arises below 20 K. Superconducting transition temperature Tc increases with increase in K content and a maximum Tc = 33 K is reached for x = 0.5, beyond which it decreases again. The doping dependent T(x) phase diagram is extracted from the magnetic and electrical transport data. It is found that magnetic ordering of Eu-moments coexists with superconductivity up to x = 0.6. The isothermal magnetization data taken at 2 K for the doped samples suggest 2+ valence states of Eu ions. We also present the temperature dependence of the lower critical field Hc1 of superconducting polycrystalline samples. The value of Hc1(0) obtained for x = 0.3, 0.5, and 0.7 after taking the demagnetization factor into account is 248, 385, and 250 Oe, respectively. The London penetration depth {\lambda}(T) calculated from the lower critical field does not show exponential behaviour at low temperature, as would be expected for a fully gapped clean s-wave superconductor. In contrast, it shows a T2 power-law feature down to T = 0.4 Tc, as observed in Ba1-xKxFe2As2 and BaFe2-xCoxAs2.Comment: 17 pages, 10 figure

Effects of pulsed anodic oxide on the intermixing in InGaAs/GaAs and LnGaAs/AlGaAs quantum wells

Intermixing in InGaAs/AlGaAs quantum well structures was studied with and without an anodic oxide cap by rapid thermal annealing. Blueshifts in the photoluminescence (PL) energy were observed. Anodic oxide was demonstrated to suppress the blueshift noticeably. The suppression of the blueshift was attributed to a strain reduction.published_or_final_versio