The Ingalls-Thomas Bijections

Given a finite acyclic quiver Q with path algebra kQ, Ingalls and Thomas have exhibited a bijection between the set of Morita equivalence classes of support-tilting modules and the set of thick subcategories of mod kQ and they have collected a large number of further bijections with these sets. We add some additional bijections and show that all these bijections hold for arbitrary hereditary artin algebras. The proofs presented here seem to be of interest also in the special case of the path algebra of a quiver.Comment: This is a modified version of an appendix which was written for the paper "The numbers of support-tilting modules for a Dynkin algebra" (see arXiv:1403.5827v1

Effects of plasma hydrogenation on trapping properties of dislocations in heteroepitaxial InP/GaAs

In previous work, we have demonstrated the effectiveness of a post-growth hydrogen plasma treatment for passivating the electrical activity of dislocations in metalorganic chemical vapor deposition (MOCVD) grown InP on GaAs substrates by a more than two order of magnitude reduction in deep level concentration and an improvement in reverse bias leakage current by a factor of approximately 20. These results make plasma hydrogenation an extremely promising technique for achieving high efficiency large area and light weight heteroepitaxial InP solar cells for space applications. In this work we investigate the carrier trapping process by dislocations in heteroepitaxial InP/GaAs and the role of hydrogen passivation on this process. It is shown that the charge trapping kinetics of dislocations after hydrogen passivation are significantly altered, approaching point defect-like behavior consistent with a transformation from a high concentration of dislocation-related defect bands within the InP bandgap to a low concentration of individual dislocation related deep levels, before and after passivation. It is further shown that the 'apparent' activation energies of dislocation related deep levels, before and after passivation, reduce by approximately 70 meV as DLTS fill pulse times are increased from 1 microsecond to 1 millisecond. A model is proposed which explains these effects based on a reduction of Coulombic interaction between individual core sites along the dislocation cores by hydrogen incorporation. Knowledge of the trapping properties in these specific structures is important to develop optimum, low loss heteroepitaxial InP cells

Making history: intentional capture of future memories

Lifelogging' technology makes it possible to amass digital data about every aspect of our everyday lives. Instead of focusing on such technical possibilities, here we investigate the way people compose long-term mnemonic representations of their lives. We asked 10 families to create a time capsule, a collection of objects used to trigger remembering in the distant future. Our results show that contrary to the lifelogging view, people are less interested in exhaustively digitally recording their past than in reconstructing it from carefully selected cues that are often physical objects. Time capsules were highly expressive and personal, many objects were made explicitly for inclusion, however with little object annotation. We use these findings to propose principles for designing technology that supports the active reconstruction of our future past

Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy

Deep level defects in n-type unintentionally doped a-plane MgxZn1−xO, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of MgxZn1−xO were examined with x = 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of Ec − 1.4 eV, 2.1 eV, 2.6 V, and Ev + 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at Ec − 2.1 eV, Ev + 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at Ev + 0.3 eV and Ec − 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the Ev + 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the Ec − 1.4 eV and Ec − 2.6 eV levels in Mg alloyed samples

Optimized III-V Multijunction Concentrator Solar Cells on Patterned Si and Ge Substrates: Final Technical Report, 15 September 2004--30 September 2006

Goal is to demo realistic path to III-V multijunction concentrator efficiencies > 40% by substrate-engineering combining compositional grading with patterned epitaxy for small-area cells for high concentration

The double Ringel-Hall algebra on a hereditary abelian finitary length category

In this paper, we study the category $\mathscr{H}^{(\rho)}$ of semi-stable coherent sheaves of a fixed slope $\rho$ over a weighted projective curve. This category has nice properties: it is a hereditary abelian finitary length category. We will define the Ringel-Hall algebra of $\mathscr{H}^{(\rho)}$ and relate it to generalized Kac-Moody Lie algebras. Finally we obtain the Kac type theorem to describe the indecomposable objects in this category, i.e. the indecomposable semi-stable sheaves.Comment: 29 page