Silicon-on-sapphire (SOS) waveguide modal analysis for mid-infrared applications

© 2017 The Author(s). Mid infrared photonics is a very promising field with many applications in various areas. Silicon-on-sapphire (SOS) is one of the proposed platforms for this region. This paper present a novel and rigorous modal analysis of the SOS strip waveguide in the mid-infrared range from λ = 2 to 6 μm using finite element method solver. The analysis include fundamental and higher modes with both transverse-electric (TE) and transverse-magnetic (TM) polarization, where the dependence of these modes on the waveguide dimensions have been studied. Based on our modal analysis, a compact, wideband and easy to fabricate TE-pass and TM-pass integrated silicon waveguide polarizers have been designed. The different polarizer designs spans the whole mid-infrared transparency region of the SOS waveguide (λ = 2–6 μm). The TE-pass polarizer reaches 35.14 dB polarization extinction ratio while the TM-pass polarizer reaches 69.77 dB polarization extinction ratio with structure length of only 23 μm

Mid Infrared Optical Gas Sensor Using Plasmonic Mach-Zehnder Interferometer

© 2020, The Author(s). In this work, we propose an optimized design for on-chip gas sensor using metal-insulator (MI) plasmonic waveguide in the mid infrared range and utilizing a Mach-Zehnder Inetrferometer (MZI). The MI waveguide utilizes a high index dielectric layer on top of the metal to enhance the sensitivity of the sensor. The thickness and the refractive index of this layer are optimized to achieve high sensitivity. Using this layer, a design that exhibits high performance for both wavelength and intensity interrogation schemes is achieved. In addition, another one that furtherly enhances the sensor performance for intensity interrogation is also proposed. This design also minimizes the sensor sensitivity to wavelength variations. Intensity interrogation scheme has the advantage of eliminating the size and cost needed by wide wavelength band measurements including either spectrometer or tunable laser in wavelength interrogation. The first design sensitivity has reached 10000 nm/RIU with wavelength interrogation figure of merit (FOMλ) of 133RIU−1 and intensity interrogation FOMI of 239RIU−1. While the second one exhibit FOMI of 363RIU−1, both with length of 250 µm around 4.6 µm wavelength. Finally, these structures are cheap, compact, and easy to fabricate

On-chip complex refractive index detection at multiple wavelengths for selective sensing

In this work we propose a method for on-chip detection of the complex refractive index of the sensing medium at multiple wavelengths for selective sensing. For the optical sensor to be selective, i.e. able to determine the substance present in the medium, either surface functionalization or absorption spectroscopy is often used. Surface functionalization is a complex process and is mainly limited to biological media. On the other hand, absorption spectroscopy is not suitable for on-chip sensing with micrometer dimensions as this will result in poor sensitivity, especially when working far from the substance absorption peaks. Here, we detect the dispersion of both the real n and imaginary k parts of the refractive index which are unique for each substance. This is done using a single micro-ring resonator (MRR) that exhibits multiple resonances over the operating wavelength range. The real and imaginary parts of the medium refractive index are determined at each resonance using the resonance wavelength and the absorption coefficient, respectively. In addition, using this technique the concentration composition of a multi-element medium can be determined by solving a system of linear equations that corresponds to the different wavelengths (resonances). We designed a silicon-on-insulator (SOI) ring-resonator operating in the near-infrared region from λ = 1.46 µm to λ = 1.6 µm. The ring exhibits 11 resonances over the 140 nm operating wavelength range where the corresponding medium refractive index is obtained. This design can detect four different substances namely, methanol, ethanol, propanol, and water. An average error of less than 0.0047% and 1.65% in the detection of the real and imaginary parts, respectively were obtained. Finally, the concentration composition of different multi-element media were successfully determined using the least square method with 97.4% detection accuracy

Optimization of Silicon Nitride Waveguide Platform for On-Chip Virus Detection

This work presents a rigorous and generic sensitivity analysis of silicon nitride on silicon dioxide strip waveguide for virus detection. In general, by functionalizing the waveguide surface with a specific antibodies layer, we make the optical sensor sensitive only to a particular virus. Unlike conventional virus detection methods such as polymerase chain reaction (PCR), integrated refractive index (RI) optical sensors offer cheap and mass-scale fabrication of compact devices for fast and straightforward detection with high sensitivity and selectivity. Our numerical analysis includes a wide range of wavelengths from visible to mid-infrared. We determined the strip waveguide’s single-mode dimensions and the optimum dimensions that maximize the sensitivity to the virus layer attached to its surface at each wavelength using finite difference eigenmode (FDE) solver. We also compared the strip waveguide with the widely used slot waveguide. Our theoretical study shows that silicon nitride strip waveguide working at lower wavelengths is the optimum choice for virus detection as it maximizes both the waveguide sensitivity (Swg) and the figure of merit (FOM) of the sensor. The optimized waveguides are well suited for a range of viruses with different sizes and refractive indices. Balanced Mach–Zehnder interferometer (MZI) sensors were designed using FDE solver and photonic circuit simulator at different wavelengths. The designed sensors show high FOM at λ = 450 nm ranging from 500 RIU−1 up to 1231 RIU−1 with LMZI = 500 µm. Different MZI configurations were also studied and compared. Finally, edge coupling from the fiber to the sensor was designed, showing insertion loss (IL) at λ = 450 nm of 4.1 dB for the design with FOM = 500 RIU−1. The obtained coupling efficiencies are higher than recently proposed fiber couplers

Mid-infrared TE-pass and TM-pass polarizer based on silicon on sapphire (SOS) waveguide

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Suspended silicon waveguide for mid-infrared gas sensing

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Waveguides sensitivity analysis for mid-infrared gas sensing

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