Spektroskopische Untersuchungen zur Bildung und Degradation poroeser Silicium-Schichten

Available from TIB Hannover: RA 831(2765) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEDEGerman

Soft X-ray emission of porous silicon nanostructures

The electronic structure of Si nanostructures in porous Si and purposely oxidized porous Si is investigated using soft x-ray emission spectroscopy. Significant changes as compared to bulk Si are observed. We interpret the spectral changes as due to an altered electronic structure in the Si nanostructures. By imposing standing wave boundary conditions to the valence band wavefunctions we calculate the emission spectrum for thin Si sheets, in good agreement with the experimental spectra

Quantum confinement effects in the soft X-ray fluorescence spectra of porous silicon nanostructures

The electronic structure of porous Si is investigated using soft x-ray emission and absorption spectroscopies. Porous Si prepared under different wavelengths of illumination was studied along with porous Si that was purposely oxidized. In the x-ray fluorescence measurements we are able to selectively probe the silicon core of oxidized nanostructures by suitable choice of the excitation wavelength. The observed changes in the valence and conduction bands are consistent with electronic structure changes associated with quantum confinement in silicon nanostructures and are similar for the oxidized and unoxidized porous silicon