15 research outputs found
Defects of SiC nanowires studied by STM and STS
For the first time the scanning tunneling microscopy (STM) and scanning
tunneling spectroscopy (STS) are employed to investigate the morphology and the
surface electronic structure of the defective silicon carbide nanowires
(SiCNWs). The SiCNWs produced via combustion synthesis route are studied. The
STS measurements are performed in the current imaging tunneling spectroscopy
mode (CITS) that allows us to determine the correlation between STM topography
and the local density of electronic states (LDOS) around the bend of an isolated
SiCNW. The measurements reveal fluctuations of LDOS in the vicinity of the
defect. The local graphitisation and the inhomogeneous concentration of doping
impurities (e.g. nitrogen, oxygen) are considered to explain these fluctuations
of metallic-like LDOS in the vicinity of the SiCNW's deformation