518 research outputs found
Spectral Representation for the Effective Macroscopic Response of a Polycrystal: Application to Third-Order Nonlinear Susceptibility
Erratum:
In our paper, we show that the spectral representation for isotropic
two-component composites also applies to uniaxial polycrystals. We have learned
that this result was, in fact, first conjectured by G.W. Milton. While our
derivation is more detailed, our result for the spectral function is the same
as Milton's. We very much regret not having been aware of this work at the time
of writing our paper.
Original abstract:
We extend the spectral theory used for the calculation of the effective
linear response functions of composites to the case of a polycrystalline
material with uniaxially anisotropic microscopic symmetry. As an application,
we combine these results with a nonlinear decoupling approximation as modified
by Ma et al., to calculate the third-order nonlinear optical susceptibility of
a uniaxial polycrystal, assuming that the effective dielectric function of the
polycrystal can be calculated within the effective-medium approximation.Comment: v2 includes erratum and the original preprin
Characterization of high-temperature PbTe p-n junctions prepared by thermal diffusion and by ion-implantation
We describe here the characteristics of two types of high-quality PbTe
p-n-junctions, prepared in this work: (1) by thermal diffusion of In4Te3 gas
(TDJ), and (2) by ion implantation (implanted junction, IJ) of In (In-IJ) and
Zn (Zn-IJ). The results, as presented here, demonstrate the high quality of
these PbTe diodes. Capacitance-voltage and current-voltage characteristics have
been measured. The measurements were carried out over a temperature range from
~ 10 K to ~ 180 K. The latter was the highest temperature, where the diode
still demonstrated rectifying properties. This maximum operating temperature is
higher than any of the earlier reported results.
The saturation current density, J0, in both diode types, was ~ 10^-5 A/cm2 at
80 K, while at 180 K J0 ~ 10^-1 A/cm2 in TDJ and ~ 1 A/cm2 in both
ion-implanted junctions. At 80 K the reverse current started to increase
markedly at a bias of ~ 400 mV for TDJ, and at ~550 mV for IJ. The ideality
factor n was about 1.5-2 for both diode types at 80 K. The analysis of the C-V
plots shows that the junctions in both diode types are linearly graded. The
analysis of the C-V plots allows also determining the height of the junction
barrier, the concentrations and the concentration gradient of the impurities,
and the temperature dependence of the static dielectric constant. The
zero-bias-resistance x area products (R0Ae) at 80 K are: 850 OHMcm2 for TDJ,
250 OHMcm2 for In-IJ, and ~ 80 OHMcm2 for Zn-IJ, while at 180 K R0Ae ~ 0.38
OHMcm2 for TDJ, and ~ 0.1 OHMcm2 for IJ. The estimated detectivity is: D* ~
10^10 cmHz^(1/2)/W up to T=140 K, determined mainly by background radiation,
while at T=180 K, D* decreases to 108-107 cmHz^(1/2)/W, and is determined by
the Johnson noise
Vermicompost effect on the trace elements distribution in the luvic chernozem of the Krasnoyarsk forest-steppe
n the field experiment (2016-2018) in the conditions of the Krasnoyarsk forest-steppe the number of trace elements mobile forms were determined and the effect of soil organic matter and increasing doses of vermicompost on their distribution in luvic chernozem was studied. It is established that the studied vermicompost does not pollute the soil, which allows its widespread use in agriculture. The correlation and regression analysis obtained linear regression equations that reflect the relationship of the chemical element and organic matter in the soil after using increasing doses of vermicompost adequately. Elements with positive correlation and high significance level include Mn, Cu, Co and Zn
Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities
Positive magnetoresistance (PMR) of a silicon MOSFET in parallel magnetic
fields B has been measured at high electron densities n >> n_c where n_c is the
critical density of the metal-insulator transition (MIT). It turns out that the
normalized PMR curves, R(B)/R(0), merge together when the field is scaled
according to B/B_c(n) where B_c is the field in which electrons become fully
spin polarized. The values of B_c have been calculated from the simple equality
between the Zeeman splitting energy and the Fermi energy taking into account
the experimentally measured dependence of the spin susceptibility on the
electron density. This extends the range of validity of the scaling all the way
to a deeply metallic regime far away from MIT. The subsequent analysis of PMR
for low n >~ n_c demonstrated that the merging of the initial parts of curves
can bee achieved only with taking into account the temperature dependence of
B_c. It is also shown that the shape of the PMR curves at strong magnetic
fields is affected by a crossover from a purely two-dimensional (2D) electron
transport to a regime where out-of-plane carrier motion becomes important
(quasi-three-dimensional regime).Comment: 5 pages, including 6 figures; misprints corrected; Europhys. Lett.
(in press
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