A NUMERICAL POWER IGBT MODEL AND ANALYSIS OF IMPROVING SUPPRESSION OF ITS LATCHING Presentation: Oral or Poster. Topics: Power Electronics or Electronics

Abstract During the last few years, great progress in the development of a new power semiconductor devices has been make the new generation of the power semiconductor is capable of conducting more current and blocking higher voltage that is the insulated gate bipolar transistor (IGBT). The aim of this paper, is to present a new approach which consists in defining our computer program (numerical model) of the IGBT based on the finite element technique (FEM), to offer an easy to use IGBT and other devices for our program, showing short computing time and reasonable accuracy, to predict and understand the behavior of various topologies of devices, to perform automated layout of the device to overcome some of the difficulties associated with analytical methods and to identify the failure mechanisms e.g. latch up, current redistribution limiting SOA, are know as the undesirable characteristics of IGBTs devices, then we propose some remedies. The validity of our computer program (this approach) is confirmed by comparison between simulation and theory results as well as the manufacture's data, and a good agreement is recorded for IGBT devices

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