Hydrodynamic model for electron-hole plasma in graphene

We propose a hydrodynamic model describing steady-state and dynamic electron and hole transport properties of graphene structures which accounts for the features of the electron and hole spectra. It is intended for electron-hole plasma in graphene characterized by high rate of intercarrier scattering compared to external scattering (on phonons and impurities), i.e., for intrinsic or optically pumped (bipolar plasma), and gated graphene (virtually monopolar plasma). We demonstrate that the effect of strong interaction of electrons and holes on their transport can be treated as a viscous friction between the electron and hole components. We apply the developed model for the calculations of the graphene dc conductivity, in particular, the effect of mutual drag of electrons and holes is described. The spectra and damping of collective excitations in graphene in the bipolar and monopolar limits are found. It is shown that at high gate voltages and, hence, at high electron and low hole densities (or vice-versa), the excitations are associated with the self-consistent electric field and the hydrodynamic pressure (plasma waves). In intrinsic and optically pumped graphene, the waves constitute quasineutral perturbations of the electron and hole densities (electron-hole sound waves) with the velocity being dependent only on the fundamental graphene constants.Comment: 11 pages, 6 figure

Radiation induced oscillations of the Hall resistivity in two-dimensional electron systems

We consider the effect of microwave radiation on the Hall resistivity in two-dimension electron systems. It is shown that the photon-assisted impurity scattering of electrons can result in oscillatory dependences of both dissipative and Hall components of the conductivity and resistivity tensors on the ratio of radiation frequency to cyclotron frequency. The Hall resistivity can include a component induced by microwave radiation which is an even function of the magnetic field. The phase of the dissipative resistivity oscillations and the polarization dependence of their amplitude are compared with those of the Hall resistivity oscillations. The developed model can clarify the results of recent experimental observations of the radiation induced Hall effect.Comment: 4 pages, 1 figur

Absolute Negative Conductivity in Two-Dimensional Electron Systems Associated with Acoustic Scattering Stimulated by Microwave Radiation

We discuss the feasibility of absolute negative conductivity (ANC) in two-dimensional electron systems (2DES) stimulated by microwave radiation in transverse magnetic field. The mechanism of ANC under consideration is associated with the electron scattering on acoustic piezoelectric phonons accompanied by the absorption of microwave photons. It is demonstrated that the dissipative components of the 2DES dc conductivity can be negative ($\sigma_{xx} = \sigma_{yy} < 0$) when the microwave frequency $\Omega$ is somewhat higher than the electron cyclotron frequency $\Omega_c$ or its harmonics. The concept of ANC associated with such a scattering mechanism can be invoked to explain the nature of the occurrence of zero-resistance ``dissipationless'' states observed in recent experiments.Comment: 7 pager, 2 figure

Effect of Coulomb scattering on graphene conductivity

The effect of Coulomb scattering on graphene conductivity in field effect transistor structures is discussed. Inter-particle scattering (electron-electron, hole-hole, and electron-hole) and scattering on charged defects are taken into account in a wide range of gate voltages. It is shown that an intrinsic conductivity of graphene (purely ambipolar system where both electron and hole densities exactly coincide) is defined by strong electron-hole scattering. It has a universal value independent of temperature. We give an explicit derivation based on scaling theory. When there is even a small discrepancy in electron and hole densities caused by applied gate voltage the conductivity is determined by both strong electron-hole scattering and weak external scattering: on defects or phonons. We suggest that a density of charged defects (occupancy of defects) depends on Fermi energy to explain a sub-linear dependence of conductivity on a fairly high gate voltage observed in experiments. We also eliminate contradictions between experimental data obtained in deposited and suspended graphene structures regarding graphene conductivity.Comment: 4 pages, 3 figures, to be published in JETP Let