333 research outputs found
Non-Universal Behavior of Finite Quantum Hall Systems as a Result of Weak Macroscopic Inhomogeneities
We show that, at low temperatures, macroscopic inhomogeneities of the
electron density in the interior of a finite sample cause a reduction in the
measured conductivity peak heights compared to the
universal values previously predicted for infinite homogeneous samples. This
effect is expected to occur for the conductivity peaks measured in standard
experimental geometries such as the Hall bar and the Corbino disc. At the
lowest temperatures, the decrease in is found to
saturate at values proportional to the difference between the adjacent plateaus
in , with a prefactor which depends on the particular realization
of disorder in the sample. We argue that this provides a possible explanation
of the ``non-universal scaling'' of observed in a
number of experiments. We also predict an enhancement of the ``non-local''
resistance due to the macroscopic inhomogeneities. We argue that, in the Hall
bar with a sharp edge, the enhanced ``non-local'' resistance and the size
corrections to the ``local'' resistance are directly related. Using
this relation, we suggest a method by which the finite-size corrections may be
eliminated from and in this case.Comment: REVTEX 3.0 file (38 pages) + 5 postscript figures in uuencoded
format. Revised version includes an additional figure showing unpublished
experimental dat
Resistivity peak values at transition between fractional quantum Hall states
Experimental data available in the literature for peak values of the diagonal
resistivity in the transitions between fractional quantum Hall states are
compared with the theoretical predictions. It is found that the majority of the
peak values are close to the theoretical values for two-dimensional systems
with moderate mobilities.Comment: 3 pages, 1 figur
Comparison of radiation damage in silicon induced by proton and neutron irradiation
The subject of radiation damage to Si detectors induced by 24-GeV/c protons and nuclear reactor neutrons has been studied. Detectors fabricated on single-crystal silicon enriched with various impurities have been tested. Significant differences in electrically active defects have been found between the various types of material. The results of the study suggest for the first time that the widely used nonionizing energy loss (NIEL) factors are insufficient for normalization of the electrically active damage in case of oxygen- and carbon-enriched silicon detectors. It has been found that a deliberate introduction of impurities into the semiconductor can affect the radiation hardness of silicon detectors. (16 refs)
A different view of the quantum Hall plateau-to-plateau transitions
We demonstrate experimentally that the transitions between adjacent integer
quantum Hall (QH) states are equivalent to a QH-to-insulator transition
occurring in the top Landau level, in the presence of an inert background of
the other completely filled Landau levels, each contributing a single unit of
quantum conductance, , to the total Hall conductance of the system.Comment: 10 pages, 4 figures, Revtex 3.
Derivative relation for thermopower in the quantum Hall regime
Recently, Tieke et al (to be published in PRL) have observed the relation
S_{yx} = alpha B dS_{xx}/dB for the components of the thermopower tensor in the
quantum Hall regime, where alpha is a constant and B is the magnetic field.
Simon and Halperin (PRL 73, 3278 (1994)) have suggested that an analogous
relation observed for the resistivity tensor R_{xx} = \alpha B dR_{xy}/dB can
be explained with a model of classical transport in an inhomogeneous medium
where the local Hall resistivity is a function of position and the local
dissipative resistivity is a small constant. In the present paper, we show that
this new thermopower relation can be explained with a similar model.Comment: This paper supercedes cond-mat/9705001 which was withdrawn. 4 pages,
Revte
Universality in an integer Quantum Hall transition
An integer Quantum Hall effect transition is studied in a modulation doped
p-SiGe sample. In contrast to most examples of such transitions the
longitudinal and Hall conductivities at the critical point are close to 0.5 and
1.5 (e^2/h), the theoretically expected values. This allows the extraction of a
scattering parameter, describing both conductivity components, which depends
exponentially on filling factor. The strong similarity of this functional form
to those observed for transitions into the Hall insulating state and for the
B=0 metal- insulator transition implies a universal quantum critical behaviour
for the transitions. The observation of this behaviour in the integer Quantum
Hall effect, for this particular sample, is attributed to the short-ranged
character of the potential associated with the dominant scatterers
Effective action and interaction energy of coupled quantum dots
We obtain the effective action of tunnel-coupled quantum dots, by modeling
the system as a Luttinger liquid with multiple barriers. For a double dot
system, we find that the resonance conditions for perfect conductance form a
hexagon in the plane of the two gate voltages controlling the density of
electrons in each dot. We also explicitly obtain the functional dependence of
the interaction energy and peak-splitting on the gate voltage controlling
tunneling between the dots and their charging energies. Our results are in good
agreement with recent experimental results, from which we obtain the Luttinger
interaction parameter .Comment: 5 pgs,latex,3 figs,revised version to be publshed in Phys.Rev.
Universality in the Crossover between Edge Channel and Bulk Transport in the Quantum Hall Regime
We present a new theoretical approach for the integer quantum Hall effect,
which is able to describe the inter-plateau transitions as well as the
transition to the Hall insulator. We find two regimes (metallic and insulator
like) of the top Landau level, in which the dissipative bulk current appears in
different directions. The regimes are separated by a temperature invariant
point.Comment: 4 page, 2 eps figures included, submitte
Thermodynamic and Tunneling Density of States of the Integer Quantum Hall Critical State
We examine the long wave length limit of the self-consistent Hartree-Fock
approximation irreducible static density-density response function by
evaluating the charge induced by an external charge. Our results are consistent
with the compressibility sum rule and inconsistent with earlier work that did
not account for consistency between the exchange-local-field and the disorder
potential. We conclude that the thermodynamic density of states is finite, in
spite of the vanishing tunneling density of states at the critical energy of
the integer quantum Hall transition.Comment: 5 pages, 4 figures, minor revisions, published versio
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