Wave techniques for noise modeling and measurement

The noise wave approach is applied to analysis, modeling, and measurement applications. Methods are presented for the calculation of component and network noise wave correlation matrices. Embedding calculations, relations to two-port figures-of-merit, and transformations to traditional representations are discussed. Simple expressions are derived for MESFET and HEMT noise wave parameters based on a linear equivalent circuit. A noise wave measurement technique is presented and experimentally compared with the conventional method

Fair Value Accounting: A Historical Review Of The Most Controversial Accounting Issue In Decades

Historically, there have been many disputes in the area of corporate financial reporting.  However, one of the primary issues of disagreement between practitioners, regulators, and theoreticians is that of valuation of financial statement components.  The latest twist in the evolution of valuation is the push for (and against) the use of a fair value approach.  The purpose of this paper is to examine the history and evolution of how the most critical elements of an entity’s financial statements are valued.  We provide a history of valuation of financial statement components, and identify the issues involved.  Further, we examine the criticisms of actions taken by the regulatory bodies in their efforts to standardize and advance accounting practices.  Particularly, we focus on the evolution of fair value measurements.  Arguments both for and against the implementation of fair value accounting are provided

Array concepts for solid-state and vacuum microelectronics millimeter-wave generation

The authors have proposed that the increasing demand for contact watt-level coherent sources in the millimeter- and submillimeter-wave region can be satisfied by fabricating two-dimensional grids loaded with oscillators and multipliers for quasi-optical coherent spatial combining of the outputs of large numbers of low-power devices. This was first demonstrated through the successful fabrication of monolithic arrays with 2000 Schottky diodes. Watt-level power outputs were obtained in doubling to 66 GHz. In addition, a simple transmission-line model was verified with a quasi-optical reflectometer that measured the array impedance. This multiplier array work is being extended to novel tripler configurations using blocking barrier devices. The technique has also been extended to oscillator configurations where the grid structure is loaded with negative-resistance devices. This was first demonstrated using Gunn devices. More recently, a 25-element MESFET grid oscillating at 10 GHz exhibited power combining and self-locking. Currently, this approach is being extended to a 100-element monolithic array of Gunn diodes. This same approach should be applicable to planar vacuum electron devices such as the submillimeter-wave BWO (backward wave oscillator) and vacuum FET

Imaging Polarimeter Arrays for Near-Millimeter Waves

An integrated-circuit antenna array has been developed that images both polarization and intensity. The array consists of a row of antennas that lean alternately left and right, creating two interlaced sub-arrays that respond to different polarizations. The arrays and the bismuth bolometer detectors are made by a photoresist shadowing technique that requires only one photolithographic mask. The array has measured polarization at a wavelength of 800 µm with an absolute accuracy of 0.8° and a relative precision of 7 arc min. and has demonstrated nearly diffraction-Iimited resolutiort of a 20° step in polarization

Millimeter-wave diode-grid phase shifters

Monolithic diode grids have been fabricated on 2-cm square gallium-arsenide wafers with 1600 Schottky-barrier varactor diodes. Shorted diodes are detected with a liquid-crystal technique, and the bad diodes are removed with an ultrasonic probe. A small-aperture reflectometer that uses wavefront division interference was developed to measure the reflection coefficient of the grids. A Phase shift of 70° with a 7-dB loss was obtained at 93 GHz when the bias on the diode grid was changed from -3 V to 1 V. A simple transmission-line grid model, together with the measured low-frequency parameters for the diodes, was shown to predict the measured performance over the entire capacitive bias range of the diodes, as well as over the complete reactive tuning range provided by a reflector behind the grid, and over a wide range of frequencies form 33 GHz to 141 GHz. This shows that the transmission-line model and the measured low-frequency diode parameters can be used to design an electronic beam-steering array and to predict its performance. An electronic beam-steering array made of a pair of grids using state-of-the-art diodes with 5-Ω series resistances would have a loss of 1.4 dB at 90 GHz

Millimeter-Wave Diode-Grid Frequency Doubler

Monolithic diode grid were fabricated on 2-cm^2 gallium-arsenide wafers in a proof-of-principle test of a quasi-optical varactor millimeter-wave frequency multiplier array concept. An equivalent circuit model based on a transmission-line analysis of plane wave illumination was applied to predict the array performance. The doubler experiments were performed under far-field illumination conditions. A second-harmonic conversion efficiency of 9.5% and output powers of 0.5 W were achieved at 66 GHz when the diode grid was pumped with a pulsed source at 33 GHz. This grid had 760 Schottky-barrier varactor diodes. The average series resistance was 27 Ω, the minimum capacitance was 18 fF at a reverse breakdown voltage of -3 V. The measurements indicate that the diode grid is a feasible device for generating watt-level powers at millimeter frequencies and that substantial improvement is possible by improving the diode breakdown voltage

A 10 GHz Quasi-Optical Grid Amplifier Using Integrated HBT Differential Pairs

We report the fabrication and testing of a 10 GHz grid amplifier utilizing sixteen GaAs chips each containing an HBT differential pair plus integral bias/feedback resistors. The overall amplifier consists of a 4x4 array of unit cells on an RT Duroid™ board having a relative permittivity of 2.2. Each unit cell consists of an emitter-coupled differential pair at the center, an input antenna which extends horizontally in both directions from the two base leads, an output antenna which extends vertically in both directions from the two collector leads, and high inductance bias lines. In operation, the active grid array is placed between a pair of crossed polarizers. The horizontally polarized input wave passes through the input polarizer and couples to the input leads. An amplified current then flows on the vertical leads, which radiate a vertically polarized amplified signal through the output polarizer. The polarizers serve dual functions, providing both input-output isolation as well as independent impedance matching for the input and output ports. The grid thus functions essentially as a free-space beam amplifier. Calculations indicate that output powers of several watts per square centimeter of grid area should be attainable with optimized structures

Modeling and performance of a 100-element pHEMT grid amplifier

A 100-element hybrid grid amplifier has been fabricated, The active devices in the grid are custom-made pseudomorphic high electron mobility transistor (pHEMT) differential-pair chips. We present a model for gain analysis and compare measurements with theory. The grid includes stabilizing resistors in the gate. Measurements show the grid has a peak gain of 10 db when tuned for 10 GHz and a gain of 12 dB when tuned for 9 GHz. The maximum 3-dB bandwidth is 15% at 9 GHz. The minimum noise figure is 3 dB. The maximum saturated output power is 3.7 W, with a peak power-added efficiency of 12%. These results area significant improvement over previous grid amplifiers based on heterojunction bipolar transistors (HBT's)

A terahertz grid frequency doubler

We present a 144-element terahertz quasi-optical grid frequency doubler. The grid is a planar structure with bow-tie antennas as a unit cell, each loaded with a planar Schottky diode. The maximum output power measured for this grid is 24 mW at 1 THz for 3.1-μs 500-GHz input pulses with a peak input power of 47 W. An efficiency of 0.17% for an input power of 6.3 W and output power of 10.8 mW is measured. To date, this is the largest recorded output power for a multiplier at terahertz frequencies. Input and output tuning curves are presented and an output pattern is measured and compared to theory