Threshold voltage dependence on channel width in nano-channel array AlGaN/GaN HEMTs

<p>In this paper, we demonstrate a nano-channel array (NCA) structure to realize the control of threshold voltage (<em>V_th</em>) of AlGaN/GaN HEMTs. The fabricated NCA structure consists of multiple nano-channels parallelly connected together. Using this structure, the <em>V_th</em> of AlGaN/GaN HEMTs can be systematically shifted from -3.92 V for a conventional depletion-mode (D-mode) AlGaN/GaN HEMT to 0.15 V for an enhancement-mode (E-mode) AlGaN/GaN HEMT. Besides, an optimum maximum peak transconductance of 235 mS/mm was achieved at the nano-channel width of 224 nm, which is almost two times larger than that of C-HEMT (&copy; 2012 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p