26 research outputs found

    Nanofabrication of Conductive Metallic Structures on Elastomeric Materials.

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    Existing techniques for patterning metallic structures on elastomers are limited in terms of resolution, yield and scalability. The primary constraint is the incompatibility of their physical properties with conventional cleanroom techniques. We demonstrate a reliable fabrication strategy to transfer high resolution metallic structures of <500 nm in dimension on elastomers. The proposed method consists of producing a metallic pattern using conventional lithographic techniques on silicon coated with a thin sacrificial aluminium layer. Subsequent wet etching of the sacrificial layer releases the elastomer with the embedded metallic pattern. Using this method, a nano-resistor with minimum feature size of 400 nm is fabricated on polydimethylsiloxane (PDMS) and applied in gas sensing. Adsorption of solvents in the PDMS causes swelling and increases the device resistance, which therefore enables the detection of volatile organic compounds (VOCs). Sensitivity to chloroform and toluene vapor with a rapid response (~30 s) and recovery (~200 s) is demonstrated using this PDMS nano-resistor at room temperature

    Gravimetric and biological sensors based on SAW and FBAR technologies

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    This presentation will describe the development of Gravimetric and Biological Sensors based on SAW and FBAR Technologies. The SAW devices were fabricated on polycrystalline ZnO thin films deposited using both standard R.F. sputtering techniques and a novel High Target Utilisation Sputtering System (HiTUS). This system ensures that we can produce the low stress films at the high deposition rates necessary for such structures to operate efficiently. However in order to further improve the sensitivity of our sensors we have also investigated the use of Thin Film Bulk Acoustic Resonators (FBARs) . We will describe standard gravimetric sensors based on such material and also gravimetric sensors for use in liquid environments through the use of inclined c-axis ZnO material. The talk will conclude with a discussion of dual mode thin film FBARs for parallel sensing of both mass loading and temperature

    Towards Vacuum-Less Operation of Nanoscale Vacuum Channel Transistors

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    Electron transmission through suspended graphene membranes measured with a low-voltage gated Si field emitter array

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    We experimentally demonstrate the transmission of electrons through different number (1, 2, and 5) of suspended graphene layers at electron energies between 20 and 250 eV. Electrons with initial energies lower than 40 eV are generated using silicon field emitter arrays with 1 μm pitch, and accelerated towards the graphene layers supported by a silicon nitride grid biased at voltages from −20 to 200 V. We measured significant increase in current collected at the anode with the presence of graphene, which is attributed to the possible generation of secondary electrons by primary electrons impinging on the graphene membrane. Highest output current was recorded with monolayer graphene at approximately 90 eV, with up to 1.7 times the incident current. The transparency of graphene to low-energy electrons and its impermeability to gas molecules could enable low-voltage field emission electron sources, which often require ultra-high vacuum, to operate in a relatively poor vacuum environment.AFOSR/MURI (Contract FA9550-18-1-0436)DARPA (Contract N66001-16-1-4038

    Nanofabricated Low-Voltage Gated Si Field-Ionization Arrays

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    We demonstrate high-density (1-μm pitch) silicon field-ionization arrays (FIAs) with self-aligned gate apertures (350 nm in diameter) and integrated nanowire current regulators. Our FIAs achieved high field factors (>0.1 nm⁻¹) and significantly lower ionization voltages (<100 V) than the devices with lower tip densities previously reported. Ion currents were measured in argon, deuterium, and helium at pressures from 1 to 16 mTorr. The FIAs turned on between 70 and 85 V, and the ion currents of around 0.4 nA were measured at 100 V. Higher currents of 7 nA were obtained at 147 V and 16 mTorr, but with the risk of gate damage by the ions energized in the intense gate-ionizer field. Si FIAs coated with Pt resulted in higher field factors due to sharper tips, but lower ion currents. Surface states, coupled with molecular adsorption and transport to the ionizer, are the possible mechanisms for lower voltage ionization in the uncoated Si FIAs
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